MCP14E4-E/SN Microchip Technology, MCP14E4-E/SN Datasheet

no-image

MCP14E4-E/SN

Manufacturer Part Number
MCP14E4-E/SN
Description
IC MOSFET DVR 4.0A DUAL 8SOIC
Manufacturer
Microchip Technology
Type
Low Sider
Datasheet

Specifications of MCP14E4-E/SN

Number Of Outputs
2
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
46ns
Current - Peak
4A
Number Of Configurations
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rise Time
30 ns
Fall Time
30 ns
Supply Voltage (min)
4.5 V
Supply Current
2 mA
Maximum Power Dissipation
665 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP14E4-E/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP14E4-E/SN
Manufacturer:
MICRCOHI
Quantity:
20 000
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver
• Low Shoot-Through/Cross-Conduction Current in
• Wide Input Supply Voltage Operating Range:
• High Capacitive Load Drive Capability:
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
• Logic Input Will Withstand Negative Swing Up To
• Space-Saving Packages:
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
Package Types
© 2008 Microchip Technology Inc.
Output
Output Stage
- 4.5V to 18V
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
Current
5V
- 8-Lead 6x5 DFN, PDIP, SOIC
ENB_A
GND
IN A
IN B
1
2
3
4
PDIP/SOIC
8-Pin
8
7
6
5
MCP14E3
Note 1: Exposed pad of the DFN package is electrically isolated.
ENB_B
OUT A
V
OUT B
DD
MCP14E4
MCP14E3/MCP14E4/MCP14E5
ENB_B
OUT A
V
OUT B
DD
MCP14E5
ENB_B
OUT A
V
OUT B
DD
ENB_A
GND
IN A
IN B
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
The
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Additional
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to V
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power dissipation capability for driving heavier
capacitive or resistive loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs. All terminals are fully protect against
Electrostatic Discharge (ESD) up to 4 kV.
6x5 DFN
MCP14E3/MCP14E4/MCP14E5
8-Pin
control
(1)
MCP14E3
of
ENB_B
OUT A
V
OUT B
DD
the
MCP14E4
ENB_B
OUT A
V
OUT B
MCP14E3/MCP14E4/
DD
DS22062B-page 1
MCP14E5
drivers
DD
ENB_B
OUT A
V
OUT B
DD
. The pins
are

Related parts for MCP14E4-E/SN

MCP14E4-E/SN Summary of contents

Page 1

... They provide low impedance in both the ON and OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The MCP14E3/ MCP14E4/MCP14E5 inputs may be driven directly from either TTL or CMOS (2.4V to 18V). Additional MCP14E5 outputs is allowed by the use of separate enable functions ...

Page 2

... MCP14E3/MCP14E4/MCP14E5 Functional Block Diagram V DD Internal Pull-up Enable Input Effective 4.7 V Input (Each Input) GND DS22062B-page 2 Inverting Non-inverting 4.7 V Dual Inverting MCP14E3 MCP14E4 Dual Noninverting MCP14E5 One Inverting, One Noninverting V DD Output © 2008 Microchip Technology Inc. ...

Page 3

... Package power dissipation is dependent on the copper pad area on the PCB. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended ...

Page 4

... MCP14E3/MCP14E4/MCP14E5 DC CHARACTERISTICS (NOTE 2) (CONTINUED) Electrical Specifications: Unless otherwise indicated, T Parameters Sym Power Supply Supply Voltage V DD Supply Current Note 1: Switching times ensured by design. 2: Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area on the PCB. DS22062B-page 4 = +25°C, with 4.5V ≤ V ...

Page 5

... Propagation Delay Time t D4 Power Supply Supply Voltage V DD Supply Current Note 1: Switching times ensured by design. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 Min Typ Max Units 2.4 — — V — — 0.8 V –10 — +10 µA V – 0.025 — — — — 0.025 V Ω ...

Page 6

... MCP14E3/MCP14E4/MCP14E5 TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V Parameters Temperature Ranges Specified Temperature Range Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-6x5 DFN Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC DS22062B-page 6 Sym ...

Page 7

... Capacitive Load (pF) FIGURE 2-2: Rise Time vs. Capacitive Load 18V FALL -40 -25 - 110 125 Temperature (°C) FIGURE 2-3: Rise and Fall Times vs. Temperature. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 ≤ 18V. DD 120 10,000 pF 90 6,800 pF 100 FIGURE 2-4: Voltage. 60 12V 18V 20 10 ...

Page 8

... FIGURE 2-11: Temperature 125° 25° FIGURE 2-12: Low) vs. Supply Voltage 110 125 Temperature (°C) Propagation Delay Time vs. Input = 1 Input = 110 125 Temperature (°C) Quiescent Current vs (MCP14E3 (MCP14E4 Supply Voltage (V) Output Resistance (Output © 2008 Microchip Technology Inc. ...

Page 9

... Supply Current vs. Capacitive Load kHz DD 30 100 kHz 25 400 kHz 200 kHz 20 15 650 kHz 100 1000 Capacitive Load (pF) FIGURE 2-15: Supply Current vs. Capacitive Load. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 ≤ 18V. DD 120 V 50 kHz DD 100 10000 10 FIGURE 2-16: Frequency 12V ...

Page 10

... MCP14E3/MCP14E4/MCP14E5 Typical Performance Curves (Continued) = +25°C with 4.5V ≤ V Note: Unless otherwise indicated 2 18V DD 1.9 1 1.5 1.3 1.1 0.9 0.7 -40 -25 - 110 125 Temperature (°C) FIGURE 2-19: Input Threshold vs. Temperature. 2.0 1 1.6 1.4 1.2 1 Supply Voltage (V) FIGURE 2-20: Input Threshold vs. Supply Voltage ...

Page 11

... Ground is the device return pin. The ground pin(s) should have a low impedance connection to the bias supply source return. High peak currents will flow out the ground pin(s) when the capacitive load is being discharged. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 Table 3-1. Output A Enable IN A Input A ...

Page 12

... MOSFETs or IGBTs. In high frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOS- FET driver like the MCP14E3/MCP14E4/MCP14E5 family can be used to provide additional source/sink current capability. An additional degree of control has been added to the MCP14E3/MCP14E4/MCP14E5 family ...

Page 13

... Placing a ground plane beneath the MCP14E3/ MCP14E4/MCP14E5 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. 4.6 Power Dissipation The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements ...

Page 14

... MCP14E3/MCP14E4/MCP14E5 4.6.2 QUIESCENT POWER DISSIPATION The power dissipation associated with the quiescent current draw of the MCP14E3/MCP14E4/MCP14E5 depends upon the state of the input and enable pins. Refer to the DC Characteristic table for the quiescent current draw for specific combinations of input and enable pin states. The quiescent power dissipation is: ...

Page 15

... Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 : Example MCP14E3 e E/MF^^ ...

Page 16

... MCP14E3/MCP14E4/MCP14E5 8-Lead Plastic Dual Flat, No Lead Package (MF) – 6x5 mm Body [DFN-S] PUNCH SINGULATED Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging NOTE TOP VIEW φ Number of Pins Pitch Overall Height Molded Package Thickness ...

Page 17

... Significant Characteristic. 3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side. 4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 ...

Page 18

... MCP14E3/MCP14E4/MCP14E5 8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging N NOTE Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width ...

Page 19

... Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 DS22062B-page 19 ...

Page 20

... MCP14E3/MCP14E4/MCP14E5 NOTES: DS22062B-page 20 © 2008 Microchip Technology Inc. ...

Page 21

... APPENDIX A: REVISION HISTORY Revision B (April 2008) The following is the list of modifications: 1. Correct examples in Product identification System page. Revision A (September 2007) • Original Release of this Document. © 2008 Microchip Technology Inc. MCP14E3/MCP14E4/MCP14E5 DS22062B-page 21 ...

Page 22

... MCP14E3/MCP14E4/MCP14E5 NOTES: DS22062B-page 22 © 2008 Microchip Technology Inc. ...

Page 23

... Dual MOSFET Driver, Inverting MCP14E3T: 4.0A Dual MOSFET Driver, Inverting Tape and Reel MCP14E4: 4.0A Dual MOSFET Driver, Non-Inverting MCP14E4T: 4.0A Dual MOSFET Driver, Non-Inverting Tape and Reel MCP14E5: 4.0A Dual MOSFET Driver, Complementary MCP14E5T: 4.0A Dual MOSFET Driver, Complementary ...

Page 24

... MCP14E3/MCP14E4/MCP14E5 NOTES: DS22062B-page 24 © 2008 Microchip Technology Inc. ...

Page 25

... PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. ...

Page 26

... Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 © 2008 Microchip Technology Inc. EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 ...

Related keywords