TC4424VMF Microchip Technology, TC4424VMF Datasheet - Page 3

• Manufacturer Part Number: TC4424VMF
• Description: IC MOSFET DVR 3A DUAL HS 8DFN
• Manufacturer: Microchip Technology
• Type: Microcontrollerr

Specifications of TC4424VMF

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 33ns
• Current - Peak: 3A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-DFN
• Rise Time: 35 ns
• Fall Time: 35 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2.5 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
Package Power Dissipation (T
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
 2004 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
................................................ (V
2:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
A
70°C)
DD
+ 0.3V) to (GND – 5V)
Sym
V
R
I
V
R
V
V
I
REV
t
t
I
PK
t
t
D1
D2
I
IN
OH
OH
OL
OL
R
F
S
IH
IL
V
DD
Min
2.4
– 0.025
–1
—
—
—
—
—
—
—
—
—
—
—
—
TC4423/TC4424/TC4425
A
>1.5
0.15
Typ
2.8
3.5
1.5
= +25°C, with 4.5V
23
25
33
38
—
—
—
—
—
3
0.025
Max
0.25
0.8
2.5
35
35
75
75
—
—
—
—
1
5
5
Units
mA
µA
ns
ns
ns
ns
V
V
V
V
A
A
V
0V V
I
I
Duty cycle
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
V
V
DD
OUT
OUT
IN
IN
L
L
L
L
= 1800 pF
= 1800 pF
= 1800 pF
= 1800 pF
= 3V (Both inputs)
= 0V (Both inputs)
= 10 mA, V
= 10 mA, V
18V.
IN
V
Conditions
DD
2%, t
DD
DD
DS21421D-page 3
= 18V
= 18V
300 µsec.