IR2118SPBF International Rectifier, IR2118SPBF Datasheet - Page 16

• Manufacturer Part Number: IR2118SPBF
• Description: IC MOSFET DRIVER HIGH SIDE 8SOIC
• Manufacturer: International Rectifier

Specifications of IR2118SPBF

• Configuration: High-Side
• Input Type: Inverting
• Delay Time: 125ns
• Current - Peak: 250mA
• Number Of Configurations: 1
• Number Of Outputs: 1
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Output: 200/420 mA
• Package Type: SOIC
• Power Dissipation: 0.625 W
• Thermal Resistance, Junction To Ambient: 200 °C/W
• Time, Fall, Turn-off: 65 ns
• Time, Rise, Turn-on: 130 ns
• Transistor Type: NPN
• Voltage, Logic Supply: 25 V
• Voltage, Output, High Level: 100 mV
• Voltage, Output, Low Level: 6 V
• Voltage, Supply: 25 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IR2117(S)/IR2118(S) & (PbF)
Figure 24. IR2117/IR2118 T
Figure 26. IR2117/IR2118 T
16
150
125
100
150
125
100
75
50
25
75
50
25
0
0
1E+2
1E+2
R
R
1E+3
1E+3
GATE
GATE
= 15 , V
= 33 , V
Frequency (Hz)
Frequency (Hz)
J
J
1E+4
1E+4
vs. Frequency (IRFBC20)
vs. Frequency (IRFBC40)
CC
CC
= 15V
= 15V
1E+5
1E+5
320V 140V
320V
1E+6
1E+6
10V
140V
10V
Figure 25. IR2117/IR2118 T
Figure 27. IR2117/IR2118 T
150
125
100
150
125
100
75
50
25
75
50
25
0
0
1E+2
1E+2
R
R
1E+3
1E+3
GATE
GATE
= 22 , V
= 10 , V
Frequency (Hz)
Frequency (Hz)
J
J
1E+4
1E+4
vs. Frequency (IRFBC30)
vs. Frequency (IRFPE50)
CC
CC
= 15V
= 15V
1E+5
1E+5
320V 140V
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10V
320V
1E+6
1E+6
140V
10V