NCP5359AMNTBG ON Semiconductor, NCP5359AMNTBG Datasheet - Page 5

• Manufacturer Part Number: NCP5359AMNTBG
• Description: IC MOSFET GATE DVR DUAL 8-DFN
• Manufacturer: ON Semiconductor

Specifications of NCP5359AMNTBG

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 10.0ns
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 30V
• Voltage - Supply: 10 V ~ 13.2 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TFDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak: -

4. Guaranteed by design; not tested in production .
5. For propagation delays, ”t
6. Design guaranteed.
ELECTRICAL CHARACTERISTICS
Supply Voltage
Supply Current
Undervoltage Lockout
V
V
Output Overvoltage Trip Threshold at
Startup
EN Input
PWM Input
High Side Driver
Low Side Driver
Thermal Shutdown
V
Power ON Reset threshold
V
Operation
V
BST Quiescent Supply Current in Normal
Operation
BST Standby Current
Input Voltage High
Input Voltage Low
Hysteresis (Note 4)
Enable Pin Sink Current
Propagation Delay Time (Note 4)
DRVH Comparator Drop Threshold
PWM Input Self Bias Voltage
DRVL Comparator Rise Threshold
Input Current
Output Resistance, Sourcing
Output Resistance, Sinking
Output Resistance, unbiased (Note 4)
SW Pull Down Resistance (Note 4)
Transition Time (Note 6)
Propagation Delay (Notes 4 & 5)
Output Resistance, Sourcing
Output Resistance, Sinking
Output Resistance, unbiased (Note 4)
Transition Time (Note 6)
Propagation Delay (Notes 4 & 5)
Negative Current Detector Threshold
Thermal Shutdown
Thermal Shutdown Hysteresis
CC
CC
CC
CC
CC
Start Threshold
UVLO Hysteresis
Operating Voltage
Quiescent Supply Current in Normal
Standby Current
Characteristics
pdh
” refers to the specified signal going high ”t
(V
CC
I
I
VTH_DRVH
VTH_DRVL
I
BST1_normal
BST2_normal
VCC_NORM
tpdh
= 10 V − 13.2 V, T
I
V
tpdh
I
I
V
tpdl
VCC
I
tpdl
Symbol
VCC_SBC
OVPSU
BST1_SD
BST2_SD
VCC
EN_SINK
V
tpd
R
tr
R
V
EN_LOW
R
tf
R
tr
Tsd
EN_HYS
tpd
V
tf
V
I
V
EN_HI
PWM
DRVH
DRVH
DRVL
DRVL
NCDT
Tsd
H_TG
H_BG
PWM
L_TG
L_BG
POR
DRVH
CC
DRVL
DRVH
hEN
DRVL
lEN
hys
HYS
TH
http://onsemi.com
EN = 5 V, PWM = OSC, F
C
EN = GND; No switching
PWM = +5 V, SW = 0 V
PWM = GND, SW = 0 V
PWM = +5 V
PWM = GND
Power Startup time, V
(Without trimming)
V
PWM = 0 V, EN = GND
V
V
BST − SW = 0 V
SW to GND
C
C
Driving High, C
Driving Low, C
SW = GND
SW = V
BST − SW = 0 V
C
C
Driving High, C
Driving Low, C
(Note 6)
(Note 6)
(Note 6)
LOAD
CC
BST
BST
LOAD
LOAD
LOAD
LOAD
A
= 5.5 V
= 0°C to +85°C, V
– V
– V
5
= 0 p
= 3 nF, V
= 3 nF, V
= 3 nF
= 3 nF
CC
SW
SW
Test Conditions
= 12 V
= 12 V
pdl
LOAD
LOAD
LOAD
LOAD
” refers to it going low.
BST
BST
= 3 nF
= 3 nF
– V
– V
= 3 nF
= 3 nF
CC
EN
SW
SW
> 9 V.
SW
= 5 V unless otherwise noted)
= 12 V
= 12 V
= 100 k
Min
150
8.2
1.8
2.0
4.0
2.2
1.4
10
10
10
10
15
10
10
15
0.25
0.25
−1.0
Typ
500
170
2.8
5.0
0.5
1.0
1.0
8.7
1.0
1.5
2.0
1.0
2.0
1.0
20
20
30
16
15
16
15
20
Max
13.2
8.0
2.5
1.8
1.8
9.5
2.0
1.0
1.6
0.8
3.5
2.5
3.5
2.5
60
60
55
55
25
20
35
30
55
25
20
35
35
Units
mA
mA
mA
mA
mV
mA
mV
kW
kW
kW
mA
°C
°C
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
W
W
W
W