MX878RTR IXYS, MX878RTR Datasheet - Page 90

• Manufacturer Part Number: MX878RTR
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX878RTR

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 200mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

RF POWER MOSFET Products
DE Linear and Switch Mode Series
The patented DE-SERIES Fast Power
new class of unique high power transistors designed as a
circuit element from the ground up for high speed, high
frequency, high power applications at frequencies up to 100
MHz. DEI's Fast Power
inductance (≤ 1.5 nH), and a low profile package, with
Features
• Isolated Substrate
• IXYS advanced low Q
• Low gate charge and capacitances
• Low R
• Very low insertion inductance (≤ 1.5 nH)
Switch Mode Z-MOS FETs
68
Linear Z-MOS
- high isolation voltage (> 2500 V)
- excellent thermal transfer
- increased temperature and power cycling capability
- easier to drive
- faster switching
X014a
Weight = 6 g
Part Number
IXZ2210N50L
IXZH10N50LA
IXZH10N50LB
IXZ1221050L-754
IXZ215N12L
Part Number
IXZ2211N50
IXZ318N50
IXZH18N50
IXZR18N50
IXZR18N50A
IXZR18N50B
IXZ316N60
IXZH16N60
IXZR16N60
IXZR16N60A
IXZR16N60B
IXZ308N120
IXZH08N120
IXZR08N120
IXZR08N120A SINGLE G-S-D
IXZR08N120B SINGLE D-S-G
DS(on)
TO-247 AD
SINGLE G-D-S
SINGLE G-S-D
SINGLE D-S-G
SINGLE G-D-S
SINGLE G-S-D
SINGLE D-S-G
SINGLE G-D-S
Configuration
PUSH-PULL
SINGLE
SINGLE
SINGLE
SINGLE
SINGLE
SINGLE
SINGLE G-S-D
SINGLE D-S-G
TM
Configuration
g
PUSH-PULL
process
technology features low insertion
SINGLE
Pin configuration
X014a* GSD
X014a# DSG
tbd
100V (operating) Linear RF MOSFETS
50V (operating) Linear RF MOSFETS
BV
1200
500
600
DSS
TM
B
MOSFETs are in a
125
tbd
VDSS
11X2
19
19
19
19
19
18
18
18
18
18
I
A
8
8
8
8
8
D
10X2
tbd
15
A
I
9
9
R
d
0.325
0.325
0.325
0.325
0.325
0.44
0.44
0.44
0.44
0.44
2.1
2.1
0.6
2.1
2.1
2.1
DS(on)
Ω Ω Ω Ω Ω
Gain 175 MHz
X016a
Weight = 5 g
Pin config.: GDS
ns
tr
4
5
dB
tbd
14
14
14
13
1960
1960
1960
1960
Ciss
1960
1930
1960
790
pF
R
switching speeds and power handling capabilities. The DE-
Series MOSFETs offer 10 times the speed and 3 times the
thermal dissipation, with
greatly reduced die stress, of comparable conventional
power MOSFET devices.
Advantages
• Optimized for RF and high speed switching at frequencies to
• Higher voltages - lower DC current requirements, higher
• Easy to mount - no insulators needed
• High power density
Applications
• RF Power Amplifiers
• High Frequency SMPS
• Laser Diode Drivers
(theta)JHS
175 MHz
load impedances, reduced system size and weight,
simplifies paralleling of devices
ISOPLUS247
Pout 175 MHz
Coss Crss
139
139
139
139
139
125
pF
78
59
as low as 0.17ºC/W, which provides exceptional
550
150
150
150
tbd
W
17.8
9.2
12
19
19
19
19
19
TM
1030
880
300
300
300
300
880
300
300
300
300
880
300
300
300
300
Pd
1080
180
180 X014a#
300
Pd
tbd
W
1
X016a#
X016a#
X016a#
X016a*
X016a*
X016a*
/
X014a
X016a
X014a
X016a
X014a
X016a
2
X014a*
Fig.
D3
D4
D4
D4
the volume,
Fig.
No.
• RF Power Generators
• Induction Heating
• High Speed Pulse Generators
tbd
D2
D3
X016a*
Pin config. GSD
X016#
Pin config. DSG
Package Style
Outlines page O-29
D2
Weight = 2 g
D3
Weight = 4 g
D4
Weight = 3 g
1
/
3
the weight and
DE 275x2
DE 275
DE 375