IPS042G International Rectifier, IPS042G Datasheet

IC MOSFET PWR SW DUAL 2A 8-SOIC

IPS042G

Manufacturer Part Number
IPS042G
Description
IC MOSFET PWR SW DUAL 2A 8-SOIC
Manufacturer
International Rectifier
Type
Low Sider
Datasheet

Specifications of IPS042G

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
370 mOhm
Current - Output / Channel
530mA
Current - Peak Output
3A
Voltage - Supply
4 V ~ 6 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IPS042G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPS042G
Quantity:
5 510
Part Number:
IPS042G
Manufacturer:
IR
Quantity:
20 000
Part Number:
IPS042GTRPBF
Manufacturer:
DANAM
Quantity:
6 218
Part Number:
IPS042GTRPBF
Manufacturer:
IR
Quantity:
20 000
Features
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET ® POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Typical Connection
www.irf.com
(Refer to lead assignment for correct pin configuration)
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Q
Logic signal
R in series
(if needed)
o
C or when the
IN
control
Product Summary
Package
S
R
V
I
T
Load
shutdown
on
ds(on)
clamp
/ T
off
D
S
Data Sheet No.PD 60153-J
8-Lead SOIC
500m
IPS042G
1.5 s
50V
2A
(max)
1

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IPS042G Summary of contents

Page 1

... Active clamp Low current & logic level input E.S.D protection Description The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-tem- perature, ESD protection and drain to source active clamp.This device combines a HEXFET ® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments ...

Page 2

... IPS042G 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref- erenced to SOURCE lead. (T Ambient = 25 copper thickness. Symbol Parameter V ds Maximum drain to source voltage V in Maximum input voltage I in, max ...

Page 3

... Min. Typ. Max. Units Test Conditions — 165 — 1.1 1.7 2.2 1.5 2 400 — — IPS042G 5V 14V 40V 20mA (see Fig.3 & shutdown (see Fig.3 & 50mA 14V over-current triggered See figure 2 s See figure 2 ...

Page 4

... IPS042G Functional Block Diagram All values are typical Lead Assignments 4 200 k 4000 > 165°c I > 1sd In1 S2 In2 8 Lead SOIC DRAIN sense SOURCE www.irf.com ...

Page 5

... Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com 90 % Vin 10 % Tr-in Tr-in t > T reset 90 % Ids Vds Figure rise time & switching time definitions T clamp Rem : V load is negative during demagnetization Figure 4 - Active clamp test circuit IPS042G Td off load + Vin IN Vds Ids 5 ...

Page 6

... IPS042G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 1200 1100 1000 900 800 700 600 500 400 300 200 100 Figure 5 - Rds Input Voltage (V) 10 ton delay 9 rise tim e 8 130% rdson Figure 7 - Turn-ON Delay Time, Rise Time & Time ...

Page 7

... Rds(on) (us Resistor ( ) 3 2.5 2 1.5 1 0.5 Isd 25°C Ilim 25° Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) www.irf.com 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us -50 - Figure shutdown (A) Vs Temperature ( IPS042G delay off fall tim Resistor ( ) 100 125 150 ...

Page 8

... IPS042G 3 Std. footprint 127°C/W m osfet on Std. footprint 100°C/W m osfet - 100 Figure 13 - Max.Cont. Ids ( Amb. Temperature ( C) 10 single pulse 1000 Hz rth=100°C/W dT=25°C 10kHz rth=100°C/W dT=25°C 1 Vbat = 14 V Tjini = T sd all curves for 1 mosfet active 0 Figure 15 - Iclamp (A) Vs Inductive Load (mH) ...

Page 9

... Figure 17 - Input current ( -50 - Figure 19 - Turn-on, Turn-off, and Treset ( www.irf.com 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 - Treset rise tim e fall tim e 100 125 150 IPS042G Vds clam p @ Isd Vin clam p @ 10m 100 125 150 Figure 18 - Vin clamp and V clamp2 (%) ...

Page 10

... IPS042G 0.25 [.010 0.25 [.010 NOT ES: 1. DIMENSIONING & TOLE RANCING PE R ASME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE S HOWN IN MILLIME TE RS [INCHE S]. 4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 ...

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