BA6238AN Rohm Semiconductor, BA6238AN Datasheet - Page 14

• Manufacturer Part Number: BA6238AN
• Description: IC DRIVER REV MOTOR 2CH SIP10
• Manufacturer: Rohm Semiconductor

Specifications of BA6238AN

• Applications: DC Motor Driver
• Number Of Outputs: 2
• Current - Output: 1.6A
• Voltage - Supply: 8 V ~ 18 V
• Operating Temperature: -25°C ~ 75°C
• Mounting Type: Through Hole
• Package / Case: 10-SIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Load: -

○
BA6246, BA6246N, BA6247FP-Y, BA6239A, BA6238A, BA6238AN
c
www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
10) Capacitor between output and GND
11) Testing on application boards
12) Switching of rotating direction (FWD/REV)
13) Regarding the input pin of the IC
7) Operation in strong electromagnetic fields
8) ASO - Area of Safety Operation
9) Built-in thermal shutdown (TSD) circuit
Using this product in strong electromagnetic fields may cause IC malfunctions. Use extreme caution with
electromagnetic fields.
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
In the event a large capacitor is connected between the output and GND, if VCC and VIN are short-circuited with 0V or
GND for any reason, the current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor
smaller than 1μF between output and GND.
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
When the rotating direction is changed over by the motor rotating condition, switch the direction after the motor is
temporarily brought to the BRAKE condition or OPEN condition. It is recommended to keep the relevant conditions as
follows:
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
The TSD circuit is designed only to shut the IC off - when BA6239A, BA6238A/AN, driver outputs low - to prevent
thermal runaway. It is not designed to protect the IC or guarantee its operation in the presence of extreme heat. Do
not continue to use the IC after the TSD circuit is activated, and do not operate the IC in an environment where
activation of the circuit is assumed.
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic element
Pin A
*All temperature values are typical.
via BRAKE: Longer than braking time*.
via OPEN: The time longer than 1 ms is recommended (BA6246, BA6246N only)
N
P
T
T
+
HYS
ON
N
[°C]
[°C]
(* the time required for the output L terminal to achieve potential below GND when brake is activated.)
GND
P
P substrate
P
+
BA6246 / N
Resistor
N
170
30
Pin A
Appendix: Example of monolithic IC structure
Parasitic
element
BA6247FP-Y
14/15
170
30
Parasitic element
Pin B
N
P
+
C
B
N
BA6239A
E
GND
P
150
50
Transistor (NPN)
P substrate
P
+
N
GND
BA6238A / AN
Other adjacent elements
Pin B
150
B
50
Technical Note
2009.04 - Rev.A
C
E
GND
Parasitic
element