TLV431ALPRPG ON Semiconductor, TLV431ALPRPG Datasheet - Page 2

IC REG SHUNT LV PREC 1.24V TO-92

TLV431ALPRPG

Manufacturer Part Number
TLV431ALPRPG
Description
IC REG SHUNT LV PREC 1.24V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of TLV431ALPRPG

Reference Type
Shunt, Adjustable
Voltage - Output
1.24 ~ 16 V
Tolerance
±1%
Number Of Channels
1
Current - Cathode
55µA
Current - Output
20mA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Product
Voltage References
Topology
Shunt References
Output Voltage
Adjustable
Initial Accuracy
1 %
Series Vref - Input Voltage (max)
18 V
Shunt Current (max)
20 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Shunt Current (min)
0.08 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Input
-
Temperature Coefficient
-
Current - Quiescent
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TLV431ALPRPG
TLV431ALPRPGOSTR
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Reference (R)
Cathode to Anode Voltage
Cathode Current
Cathode to Anode Voltage
Cathode Current Range, Continuous
Reference Input Current Range, Continuous
Thermal Characteristics
Operating Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
LP Suffix Package, TO−92−3 Package
SN Suffix Package, TSOP−5 Package
SN1 Suffix Package, SOT−23−3 Package
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambient
This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883,
Method 3015. Machine Model Method 200 V.
Device Symbol
Cathode (K)
Anode (A)
P
D
(Full operating ambient temperature range applies, unless otherwise noted)
+
T
Figure 2. Representative Device Symbol and Schematic Diagram
J(max)
R
qJA
Condition
Rating
* T
Reference (R)
A
http://onsemi.com
2
The device contains 13 active transistors.
Cathode (K)
Anode (A)
Symbol
Symbol
V
R
R
R
R
I
V
T
KA
K
I
T
T
I
ref
qJA
qJC
qJA
qJA
stg
KA
K
A
J
Min
V
0.1
ref
*0.05 to 10
*65 to 150
*40 to 85
−20 to 25
Value
178
226
491
150
18
83
Max
16
20
Unit
mA
mA
C/W
V
C
C
C
Unit
mA
V

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