LTC1433IGN Linear Technology, LTC1433IGN Datasheet - Page 3

• Manufacturer Part Number: LTC1433IGN
• Description: IC DC/DC CONV STEP-DOWN 16-SSOP
• Manufacturer: Linear Technology
• Type: Step-Down (Buck)r

Specifications of LTC1433IGN

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 3.3V, 5V, Adj
• Current - Output: 450mA
• Frequency - Switching: 125kHz ~ 240kHz
• Voltage - Input: 3 ~ 13.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power - Output: -

SYMBOL
I
Main Control Loop
I
V
I
Oscillator and Phase-Locked Loop
f
R
I
Power-On Reset
V
I
V
t
Low-Battery Comparator
V
I
V
V
V
I
P-Channel Power FETs Characteristics
R
R
I
I
The
range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: C-grade device specifications are guaranteed over the 0 C to 70 C
temperature range. In addition, C-grade device specifications are assured
over the – 40 C to 85 C temperature range by design or correlation, but
are not production tested.
Note 3: I-grade device specifications are guaranteed over the – 40 C to
85 C temperature range by design, testing or correlation.
ELECTRICAL CHARACTERISTICS
PROG
Q
RUN/SS
OSC
PLL LPF
LPOR
DPOR
LLBO
INLBI
LSSW
LBSW
RUN/SS
SATPOR
TRPOR
SATLBO
TRLBI
HYSTLB
SDLB
PLLIN
SMFET
BIGFET
denotes specifications which apply over the specified temperature
PARAMETER
V
Input DC Supply Current
RUN/SS Threshold
Soft Start Current Source
Oscillator Frequency
PLL Input Resistance
Phase Detector Output Current
POR Saturation Voltage
POR Leakage
POR Trip Voltage from Regulated
Output
POR Delay
LBO Saturation Voltage
LBO Leakage
LBI Trip Voltage
Low-Battery Comparator Hysteresis
Low-Battery Shutdown Trip Point
LBI Input Current
R
R
Small FET Leakage
Big FET Leakage
PROG
DS(ON)
DS(ON)
Normal Mode
Shutdown, Reference Alive
Complete Shutdown
V
Sinking Capability
Sourcing Capability
CO
High
Input Current
of Small FET
of Big FET
CONDITIONS
(Note 6)
V
V
f
High to Low Transition on LBO
I
0.5V > V
V
3.6V < V
V
C
V
f
I
V
V
V
I
V
V
I
V
V
PLLIN
PLLIN
POR
LBO
SSW
BSW
IN
RUN/SS
RUN/SS
RUN/SS
OSC
PLL LPF
POR
PROG
PROG
LBO
LBI
RUN/SS
RUN/SS
– 0.5V < V
= 1.6mA, V
= 1.19V
= 1.6mA, V
= 15mA
= 150mA
= 10V, V
= 100pF (Note 7)
= 10V, V
< f
> f
Pin Open, V
Pin Open
PROG
IN
= 0V, 3.6V < V
= 0V, 3.6V < V
= 0V
= 0V
= 0V
= 2.4V
OSC
OSC
< 13V
T
LBI
A
OSENSE
PROG
LBI
OSENSE
= 25 C, V
= 1.4V
OSENSE
= 1.1V
< V
= 1.2V, V
IN
IN
IN
= 1V, V
< 13V, LBI > 0.9V
< 13V, LBI 0.48V
Ramping Negative
Note 4: T
dissipation P
Note 5: The LTC1433/LTC1434 are tested in a feedback loop which servos
V
Note 6: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 7: Oscillator frequency is tested by measuring the C
discharge currents and applying the formula:
IN
OSENSE
= 10V, V
LTC1433/LTC1434: T
f
PROG
PROG
OSC
to the feedback point for the error amplifier (V
(kHz) =
J
Open
Open
is calculated from the ambient temperature T
RUN/SS
D
according to the following formula:
C
OSC
= 5V, unless otherwise noted.
8.4(10
(pF) + 11
J
= T
8
A
)
MIN
– 11
1.16
112
200
0.8
1.2
10
10
LTC1433/LTC1434
+ (P
D
I
CHG
)(150 C/W)
1
+
65536
– 7.5
TYP
0.01
1.19
0.74
470
125
240
1.3
0.6
0.2
0.6
3.3
0.8
I
– 4
35
15
50
15
15
40
DIS
3
1
7
5
1
4
–1
MAX
1000
1000
ITH
– 10
1.22
142
4.5
1.0
1.0
1.0
1.0
4.1
1.2
A
70
30
– 4
20
20
50
10
2
OSC
and power
= 1.19V).
charge and
UNITS
Cycles
3
kHz
kHz
mV
k
nA
nA
nA
%
A
A
A
A
A
V
A
A
A
V
A
V
A
V
V