SI8440-A-IS Silicon Laboratories Inc, SI8440-A-IS Datasheet
SI8440-A-IS
Specifications of SI8440-A-IS
SI8440-A-IS
Related parts for SI8440-A-IS
SI8440-A-IS Summary of contents
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... Copyright © 2008 by Silicon Laboratories Pin Assignments Wide Body SOIC DD1 DD2 2 15 GND2 GND1 EN1/NC 10 EN2/ GND1 GND2 Top View U.S. Patent #6,262,600 U.S. Patent #6,525,566 U.S. Patent #6,873,065 U.S. Patent #7,075,329 U.S. Patent #7,302,247 U.S. Patent #7,376,212 Other Patents Pending Si8440/41/42/45 ...
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... Si8440/41/42/45 2 Rev. 0.62 ...
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... Supply Bypass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2. Input and Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3. Enable Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 4.4. RF Radiated Emissions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.5. RF Immunity and Common Mode Transient Immunity . . . . . . . . . . . . . . . . . . . . . . . 24 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7. Package Outline: Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 Si8440/41/42/45 Rev. 0.62 Page 3 ...
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... DD1 Si8442-A,-B,-C, V DD2 Si8442-A,-B,-C, V DD1 Si8442-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8440/45-B,-C, V DD1 Si8440/45-B,-C, V DD2 Si8441-B,-C, V DD1 Si8441-B,-C, V DD2 Si8442-B,-C, V DD1 Si8442-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... See Figure 2 PLH PWD See Figure 2 t PSK , t See Figure 2 PLH PWD See Figure 2 t PSK , t See Figure 2 PLH PWD See Figure 2 t PSK Rev. 0.62 Si8440/41/42/45 Min Typ Max Unit 0 — 1 Mbps — — 1000 — — 75 — — 30 — — 50 — ...
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... Si8440/41/42/45 Table 1. Electrical Characteristics (Continued –40 to 125 ºC) DD1 DD2 A Parameter Symbol For All Models Output Rise Time Output Fall Time Common Mode Transient CMTI Immunity Enable to Data Valid Enable to Data Tri-State 2 Start-up Time Notes the magnitude of the difference in propagation delay times measured between different units operating at PSK(P-P) the same supply voltages, load, and ambient temperature ...
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... DD1 Si8442-A,-B,-C, V DD2 Si8442-A,-B,-C, V DD1 Si8442-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8440/45-B,-C, V DD1 Si8440/45-B,-C, V DD2 Si8441-B,-C, V DD1 Si8441-B,-C, V DD2 Si8442-B,-C, V DD1 Si8442-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... Si8440/41/42/45 Table 2. Electrical Characteristics (Continued 3 3 –40 to 125 ºC) DD1 DD2 A Parameter Si844x-A Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion | PLH PHL 1 Propagation Delay Skew Channel-Channel Skew Si844x-B Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion ...
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... Start-up time is the time period from the application of power to valid data at the output. Symbol Test Condition See Figure See Figure 2 CMTI See Figure 1 en1 t See Figure 1 en2 t SU Rev. 0.62 Si8440/41/42/45 Min Typ Max Unit — 2 — — 2 — — kV/µs — 5 — — 5 — — 3 — µs 9 ...
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... DD1 Si8442-A,-B,-C, V DD2 Si8442-A,-B,-C, V DD1 Si8442-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8440/45-B,-C, V DD1 Si8440/45-B,-C, V DD2 Si8441-B,-C, V DD1 Si8441-B,-C, V DD2 Si8442-B,-C, V DD1 Si8442-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... See Figure 2 PHL PLH PWD See Figure 2 t PSK(P-P) t PSK See Figure 2 PHL PLH PWD See Figure 2 t PSK(P-P) t PSK Rev. 0.62 Si8440/41/42/45 Min Typ Max Unit 0 — 1 Mbps — — 1000 — — 75 — — 30 — — 50 — — ...
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... Si8440/41/42/45 Table 3. Electrical Characteristics (Continued 2 2 –40 to 100 ºC) DD1 DD2 A Parameter For All Models Output Rise Time Output Fall Time Common Mode Transient Immunity at Logic Low Output Enable to Data Valid Enable to Data Tri-State 2 Start-up Time Notes the magnitude of the difference in propagation delay times measured between different units operating at the PSK(P-P) same supply voltages, load, and ambient temperature ...
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... STG T – –0.5 DD1 DD2 V –0 –0 Symbol Test Condition T 100 Mbps 150 Mbps 2.375 DD1 V 2.375 DD2 Rev. 0.62 Si8440/41/42/45 Typ Max Unit — 150 ºC — 125 ºC — — 0 — 0 — — — — 260 ºC — ...
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... Si8440/41/42/45 Table 6. Regulatory Information CSA The Si84xx is certified under CSA Component Acceptance Notice. For more details, see File 232873. VDE The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL The Si84xx is certified under UL1577 component recognition program to provide basic insulation to 2500 V (1 minute production tested > ...
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... The Si84xx provides a climate classification of 40/125/21. Table 10. IEC Safety Limiting Values Parameter Case Temperature Safety input, output, or supply current Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 3. *Note: Si8440/41/42/45 Test Conditions RMS RMS RMS Symbol Test Condition ...
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... Si8440/41/42/45 Table 11. Thermal Characteristics Parameter IC Junction-to-Case Thermal Resistance IC Junction-to-Air Thermal Resistance Device Power Dissipation* *Note: The Si8440-C-IS is tested with V square wave. 200 175 162 150 125 100 Figure 3. Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 ...
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... Typical Performance Characteristics Data Rate (Mbps) Figure 4. Si8440/45 Typical V Current vs. Data Rate 5, 3.3, and 2.5 V Operation Data Rate (Mbps) Figure 5. Si8440/45 Typical V Current vs. Data Rate 5, 3.3, and 2.5 V Operation (15 pF Load 3. 100 Supply Figure 6. Si8441 Typical V DD1 vs. Data Rate 5, 3.3, and 2.5 V Operation ...
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... Si8440/41/42/ Falling Edge 7 6 Rising Edge 5 -40 - Temperature (Degrees C) Figure 9. Propagation Delay vs. Temperature 5 V Operation Falling Edge -40 - Temperature (Degrees C) Figure 10. Propagation Delay vs. Temperature 3.3 V Operation 15 13 Rising Edge -40 - Temperature (Degrees C) Figure 11. Propagation Delay vs. Temperature 2.5 V Operation 18 80 100 120 Rising Edge ...
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... Figure 13 illustrates an eye-diagram taken on an Si8440. The test used an Anritsu (MP1763C) Pulse Pattern Generator for the data source. The output of the generator's clock and data from an Si8440 were captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that very low pulse width distortion and very little jitter were exhibited ...
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... Si8440/41/42/45 4. Layout Recommendations Dielectric isolation is a set of specifications produced by the safety regulatory agencies from around the world that describes the physical construction of electrical equipment that derives power from a high-voltage power system such as 100–240 V systems or industrial power systems. The dielectric test (or HIPOT test) given in the safety ...
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... It is recommended that the enable inputs be connected to an external logic high or low level when the Si84xx is operating in noisy environments Connect (NC) replaces EN1 on Si8440/45. No Connect replaces EN2 on the Si8445. No Connects are not internally connected and can be left floating, tied to VDD, or tied to GND. 5. "Powered" state (P) is defined as 2.375 V < VDD < 5.5 V. ...
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... EN1 or EN2 if they are left floating. If EN1, EN2 are unused recommended they be connected to an external logic level, especially if the Si84xx is operating in a noisy environment. P/N EN1* EN2* Si8440 — H Outputs B1, B2, B3, B4 are enabled. — L Outputs B1, B2, B3, B4 are disabled and in high impedance state ...
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... RF Radiated Emissions The Si8440 family uses a RF carrier frequency of approximately 2.1 GHz. This will result in a small amount of radiated emissions at this frequency and its harmonics. The radiation is not from the IC chip but due to a small amount of RF energy driving the isolated ground planes which can act as a dipole antenna. ...
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... Si8440/41/42/45 4.5. RF Immunity and Common Mode Transient Immunity The Si8440 family has very high common mode transient immunity while transmitting data. This is typically measured by applying a square pulse with very fast rise/fall times between the isolated grounds. Measurements show no failures kV/µs. During a high surge event the output may glitch low for up to 20–30 ns, but the output corrects immediately after the surge event ...
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... Side 1 digital input. Digital Input Side 1 digital input. Digital I/O Side 1 digital input or output. Digital I/O Side 1 digital input or output. Digital Input Side 1 active high enable Si8440/45. Ground Side 1 ground. Ground Side 2 ground. Digital Input Side 2 active high enable Si8445. Digital I/O Side 2 digital input or output ...
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... Si8440/41/42/45 6. Ordering Guide Ordering Part Number of Number Inputs V Side Si8440-A-IS 4 Si8440-B-IS 4 Si8440-C-IS 4 Si8441-A-IS 3 Si8441-B-IS 3 Si8441-C-IS 3 Si8442-A-IS 2 Si8442-B-IS 2 Si8442-C-IS 2 Si8445-B-IS 4 Note: All packages are Pb-free and RoHS compliant. Moisture sensitivity level is MSL3 with peak reflow temperature of °C 260 according to the JEDEC industry standard classifications, and peak solder temperature. ...
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... Table 14. Package Diagram Dimensions Figure 17. 16-Pin Wide Body SOIC Millimeters Symbol Min Max A — 2.65 A1 0.1 0.3 D 10.3 BSC E 10.3 BSC E1 7.5 BSC b 0.31 0.51 c 0.20 0.33 e 1.27 BSC h 0.25 0.75 L 0.4 1.27 θ 0° 7° Rev. 0.62 Si8440/41/42/45 27 ...
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... Si8440/41/42/ OCUMENT HANGE IST Revision 0.2 to Revision 0.3 Added enable high and low typical current specifications to Tables 1, 2, and 3. Added startup time specifications (with note 5) to Tables 1, 2, and 3. Rewrote paragraph 1 in section "4.5. RF Immunity and Common Mode Transient Immunity" on page 24 to reflect 30kV/µ ...
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... N : OTES Si8440/41/42/45 Rev. 0.62 29 ...
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... Si8440/41/42/ ONTACT NFORMATION Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel: 1+(512) 416-8500 Fax: 1+(512) 416-9669 Toll Free: 1+(877) 444-3032 Email: PowerProducts@silabs.com Internet: www.silabs.com The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. ...