MCT6 Vishay, MCT6 Datasheet - Page 3

• Manufacturer Part Number: MCT6
• Description: OPTOCOUPLER PHOTOTRANS 20% 8DIP
• Manufacturer: Vishay

Specifications of MCT6

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 2
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 30mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 8-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor
• Configuration: 2
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 50 % (Typ)
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 30 mA
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 20mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 8
• Number Of Elements: 2
• Forward Voltage: 1.5V
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Collector Current (dc) (max): 30mA
• Power Dissipation: 400mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 751-1336-5; MCT6GI; MCT6GI

MCT6H, MCT62H
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
www.vishay.com
562
95 10804
amb
Fig. 3 - Total Power Dissipation vs. Ambient Temperature
= 25
0
R
t
T
96 11862
p
t
G
p
96 11700
= 50 µs
= 0.01
Fig. 1 - Test Circuit, non Saturated Operation
Fig. 4 - Forward Current vs. Forward Voltage
= 50 Ω
°
1000
C, unless otherwise specified
100
300
250
200
150
100
0.1
I
10
50
F
1
0
0
0
50 Ω
Phototransistor
IR-diode
0.2
I
T
F
Coupled device
amb
0.4
- Ambient Temperature (°C)
V
F
0.6
- Forward Voltage (V)
40
100 Ω
0.8
1.0
For technical questions, contact: [e-mail]
+ 5 V
1.2
I
Channel II
C
Channel I
= 2 mA; adjusted through
80
1.4
Optocoupler, Phototransistor
1.6
Output, Dual Channel
input amplitude
1.8
120
2.0
Oscilloscope
R
C
L
L
= 1 MΩ
= 20 pF
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 6 - Collector Dark Current vs. Ambient Temperature
t
t
t
t
p
d
r
on
(= t
100 %
10 000
90 %
10 %
96 11927
d
96 11928
1000
+ t
100
I
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
C
10
F
0
0
r
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
1
)
0
10 20 30 40 50 60 70 80 90 100
V
T
t
I
Pulse duration
Delay time
Rise time
Turn-on time
F
d
Fig. 2 - Switching Times
CE
amb
t
V
I
F
T
on
= 5 mA
CE
t
amb
r
= 0 A
= 5 V
- Ambient Temperature (°C)
= 20 V
- Ambient Temperature (°C)
t
p
t
t
t
t
s
off
f
s
Document Number: 83525
(= t
s
t
off
+ t
t
f
f
)
Rev. 1.6, 10-Dec-08
Storage time
Fall time
Turn-off time
96 11698
t
t