MCT2EM Fairchild Optoelectronics Group, MCT2EM Datasheet
MCT2EM
Specifications of MCT2EM
Related parts for MCT2EM
MCT2EM Summary of contents
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... Digital logic inputs Microprocessor inputs Schematic Anode 1 Cathode 2 No Connection 3 ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 Description The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. Package Outlines 6 Base ...
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... LED Power Dissipation @ T D Derate above 25°C DETECTOR I Collector Current C V Collector-Emitter Voltage CEO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 Parameter = 25° 25° 25° Value Units -40 to +150 °C -40 to +100 °C 260 for 10 sec ° ...
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... Parameter V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *All typicals 25°C A ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0 25°C unless otherwise specified) A Test Conditions Device I = 20mA MCT2M F MCT2EM MCT271M T = 0°C–70° 40mA ...
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... Non-saturated fall time f t Non-saturated turn-on time on t Non-saturated turn-off time off *All typicals 25°C A ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 (Continued 25°C unless otherwise specified) A Test Conditions T = 0°C–70° 10mA 10V 3.2mA to 32mA, ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. Max. ...
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... AMBIENT TEMPERATURE ( C) A Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 1.6 1.4 1.2 1 100 C A 0.2 0.0 0 100 1 ...
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... R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 (Continued) 5.0 4.5 4.0 3.5 3 2.5 2.0 1.5 1.0 0 100 vs. R off BE ...
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... Typical Electro-Optical Characteristics TEST CIRCUIT I F INPUT R BE Figure 11. Switching Time Test Circuit and Waveforms (SATURATED) ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0 10V 10% OUTPUT 90% Adjust I to produce I = 2mA F C INPUT TPD HL OUTPUT 1.5 V Figure 12. Switching Time Waveforms (MCT210M) ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 Standard Through Hole Device (50 units per tube) Surface Mount Lead Bend Surface Mount ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 11 Ø1.5 MIN 1 ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...