H11AV1AM Fairchild Optoelectronics Group, H11AV1AM Datasheet
H11AV1AM
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H11AV1AM Summary of contents
Page 1
... Microprocessor inputs Schematic ANODE 1 CATHODE 2 N/C 3 ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. Package Outlines 6 BASE 5 COLLECTOR ...
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... Derate above 25°C DETECTOR V Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Collector Voltage ECO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0 25°C unless otherwise specified.) A Parameter = 25° 25° 25° Value Units -40 to +150 °C -40 to +100 ° ...
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... Time Isolation Characteristics Symbol Parameters V Input-Output Isolation Voltage ISO C Isolation Capacitance ISO R Isolation Resistance ISO *Typical values 25°C A ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0 25°C unless otherwise specified.) A Test Conditions = 10mA 25° -55° 100° 6.0V ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...
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... Fig. 5 CTR vs. RBE (Saturated) 1.0 0 20mA F 0 0.7 0.6 0.5 I 0.4 0.3 0.2 0.1 0.0 10 100 R - BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 1.6 1.4 1.2 1.0 0 0.4 = 100 C A 0.2 0.0 100 0 1.0 0.9 0 5mA F ...
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... R – BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3.5 3 2.5 2.0 1.5 1.0 0 100 10000 vs. R off ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 Order Entry Identifier (Example) ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 12.0 0.1 2.0 0.05 4.0 0.1 10.1 0.20 260 C Time above 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 9 Ø ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...