TIL111 Fairchild Optoelectronics Group, TIL111 Datasheet
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TIL111 Summary of contents
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... Industrial controls Schematic ANODE 1 CATHODE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 General Description The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. Package Outlines 6 BASE 5 COLLECTOR 4 EMITTER September 2009 www ...
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... Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Collector Voltage ECO V Emitter-Base Voltage EBO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Device All All All = 25°C All A All TIL111M MOC8100M, TIL117M All = 25 °C All A All ...
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... Breakdown Voltage I Collector-Emitter Dark CEO Current I Collector-Base Dark CBO Current I CBO C Capacitance CE *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 16mA T = 25° 10mA for T = 0°C–70° MOC8100M -55° ...
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... Operation) Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued 25°C unless otherwise specified.) A Test Conditions I = 10mA 10V 1mA MOC8100M 1mA, V ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. Max. ...
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... I F 0.4 0 0.2 0.1 0.0 10 100 R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ...
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... R – BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3 3.0 2.5 2.0 1.5 1.0 0 100 Fig. 10 Dark Current vs. Ambient Temperature vs. R ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Order Entry Identifier (Example) TIL111M ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø1.5 MIN 1 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...