MOC3081M Fairchild Optoelectronics Group, MOC3081M Datasheet
MOC3081M
Specifications of MOC3081M
MOC3081-MQT
MOC3081-MQT
MOC3081QT
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MOC3081M Summary of contents
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... SUBSTRATE) ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in ...
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... Note: 1. Isolation surge voltage internal device dielectric breakdown rating. For this test, Pins 1 and 2 are ISO common, and Pins 4, 5 and 6 are common. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0 25°C unless otherwise noted) A Parameters (1) (peak AC voltage, 60Hz, 1 sec. duration) ...
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... Test Conditions I = Rated Rated DRM off state Test Conditions ( 60Hz sec. value less than or equal to max I F (15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and FT 3 Min. Typ.* Max. 1.3 1.5 0.005 100 10 500 600 1500 Device Min. Typ.* Max ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...
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... LED Pulse Width NORMALIZED TO PW >> 100 LED TRIGGER PULSE WIDTH ( s) IN ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 10 100 -40 Figure 4. Leakage Current, I DRM vs. Temperature 10000 1000 100 10 1 0.1 -40 100 5 Figure 2 ...
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... A Figure Holding Current vs. Temperature H 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -40 - AMBIENT TEMPERATURE ( ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 (Continued) 800 = 25 C 600 400 200 0 -200 -400 -600 -800 100 1.20 1.15 1.10 1.05 1.00 0.95 ...
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... Note: This optoisolator should not be used to drive a load directly intended trigger device only. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0 TEST X100 SCOPE D.U.T. D.U.T. PROBE 504 V Figure 10. Static dv/dt Test Waveform of the part, 15mA for the MOC3081M, 10mA for the MOC3082M, FT 360 1 6 MOC3081M 2 5 FKPF12N80 MOC3082M MOC3083M 3 4 330 Figure 11 ...
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... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
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... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Order Entry Identifier (Example) MOC3081M ...
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... C 140 120 100 ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø1.5 MIN 1 ...
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... Datasheet Product Status Identification Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Power-SPM ® ® PowerTrench SM PowerXS™ Programmable Active Droop ® QFET e-Series QS Quiet Series RapidConfigure Saving our world, 1mW/W/ time™ ...