CQY37N Vishay, CQY37N Datasheet - Page 3

• Manufacturer Part Number: CQY37N
• Description: DIODE IR EMITTER GAAS 1.8MM
• Manufacturer: Vishay

Specifications of CQY37N

• Radiant Intensity: 5 mW/sr
• Viewing Angle: 24°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 2.2mW/sr @ 50mA
• Wavelength: 950nm
• Voltage - Forward (vf) Typ: 1.3V
• Orientation: Top View
• Mounting Type: Through Hole
• Package / Case: Radial, 1.8mm (T-3/4)
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 170 mW
• Maximum Operating Temperature: + 100 C
• Lens Shape: Circular
• Peak Wavelength: 950nm
• Forward Current If(av): 50mA
• Rise Time: 800ns
• Supply Voltage Range: 1.3V
• Operating Temperature Range: -25°C To +85°C
• Diode Case Style: T-3/4
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1027

Document Number: 81002
Rev. 1.7, 08-Mar-11
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
13718
94 7920
94 7993
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
100
100
0.1
0.1
1.6
1.2
0.8
0.4
10
10
- 10
1
1
0
10
1
0
0
T
10
amb
I
F
I
10
- Ambient Temperature (°C)
F
- Forward Current (mA)
– Forward Current (mA)
1 0
1
50
10
I
F
2
= 20 mA
For technical questions, contact:
100
100
10
Infrared Emitting Diode, 950 nm,
3
1000
140
10
4
GaAs
[e-mail]
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7922
94 7994
Fig. 8 - Relative Radiant Power vs. Wavelength
1.25
0.75
0.25
1.0
0.5
1.0
0.9
0.8
0.7
0
900
0.6
0.4
Vishay Semiconductors
λ - Wavelength (nm)
0.2
I
F
= 100 mA
950
0°
0
0.2
10°
0.4
20°
CQY37N
www.vishay.com
0.6
1000
30°
40°
50°
60°
70°
80°
3