DIODE IR EMITTING GAAS TO-46

SE5450-013

Manufacturer Part NumberSE5450-013
DescriptionDIODE IR EMITTING GAAS TO-46
ManufacturerHoneywell Sensing and Control
SE5450-013 datasheet
 


Specifications of SE5450-013

Viewing Angle90°Current - Dc Forward (if)100mA
Radiant Intensity (ie) Min @ If1.8mW/sr @ 100mAWavelength935nm
Voltage - Forward (vf) Typ1.7VOrientationTop View
Mounting TypeThrough HolePackage / CaseTO-46-2, Metal Can
Peak Wavelength935nmForward Current If(av)100mA
Rise Time700nsFall Time Tf700ns
Supply Voltage Range1.7VOperating Temperature Range-55°C To +125°C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names480-2982
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SE3450/5450
GaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(- 55¡C to +125¡C)
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3450/5450 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3450 series has flat window cans
providing a wide beam angle, while the SE5450 series
has glass lensed cans providing a narrow beam angle.
The TO-46 packages offer high power dissipation
capability and are ideally suited for operation in hostile
environment.
24
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SE3450
45°
.188 (4.77)
DIA.
.178 (4.52)
.046(1.17)
.500
.036(.91)
.219 (5.56)
DIA.
(12.70)
.208 (5.28)
MIN.
.048(1.22)
.028(.71)
.160 (4.06)
.015
DIA.
.137 (3.48)
(0.36)
.018
DIA.
(.460)
.153 (3.89)
LEADS:
.140 (3.56)
1. CATHODE (TAB)
2. ANODE
DIM_003a.ds4
SE5450
45°
.188 (4.77)
DIA.
.178 (4.52)
.046(1.17)
.500
.036(.91)
.219 (5.56)
DIA.
(12.70)
.208 (5.28)
MIN.
.048(1.22)
.015
.028(.71)
.160 (4.06)
DIA.
(0.36)
.137 (3.48)
.018
.200
DIA.
LEADS:
(.460)
5.08
1. CATHODE (TAB)
.247 (6.27)
2. ANODE
.224 (5.89)
DIM_003b.ds4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
.100(2.54)DIA
1
NOM
2
(CASE)
.100(2.54)DIA
1
NOM
2
(CASE)

SE5450-013 Summary of contents

  • Page 1

    ... The SE3450/5450 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series has glass lensed cans providing a narrow beam angle. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environment ...

  • Page 2

    SE3450/5450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air ...

  • Page 3

    ... I = 100 mA F 1.30 1.25 1.20 -50 - Temperature - °C 26 Fig. 2 Radiant Intensity vs Angular Displacement (SE5450) gra_017.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current gra_018.ds4 1.40 1.35 1 ...

  • Page 4

    ... Case temperature - °C All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. Fig. 8 Coupling Characteristics SE5450 with SD5443 gra_021.ds4 1.0 0.8 0.6 0.4 0.2 0.0 0.8 1 Lens-to-lens distance - inches gra_022 ...