PDI-E911 Advanced Photonix Inc, PDI-E911 Datasheet

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PDI-E911

Manufacturer Part Number
PDI-E911
Description
EMITTER IR 940NM 80DEG TO-46
Manufacturer
Advanced Photonix Inc
Datasheet

Specifications of PDI-E911

Current - Dc Forward (if)
180mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Viewing Angle
160°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Radiant Intensity (ie) Min @ If
-
Other names
PT-PDI-E911
FEATURES
*1/16 inch from case for 3 secs max
PHOTONIC
DETECTORS INC.
ABSOLUTE MAXIMUM RATING
ELECTRO-OPTICAL CHARACTERISTICS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere. [FORM NO. 100-PDI-E911 REV C]
SYMBOL
SYMBOL CHARACTERISTIC
Dual cathode
High current
Medium- high emission angle
To & Ts
Pd
V
TS
D D
V
I
I
P
R
I
FP
FP
t
t
R
r
R
O
f
P
F
d
FORWARD CURRENT
POWER OUTPUT vs
I
F
IN AMPS
Output Power
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Halfwidth
Dynamic Resistance
Rise Time
Fall Time
Power Dissipation
Continuous Forward Current
Peak Forward Current (100 s pulse,10pps)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
PARAMETER
DESCRIPTION:
diode uses dual cathode,high current reliability liquid
phase epitaxially grown GaAs. Optimized for high
power, high current at 940 nm. Packaged in a TO-46
can with a flat glass window cap.
(TA=25
PACKAGE DIMENSIONS inch (mm)
TEST CONDITIONS
I
I
V
I
I
I
I
I
940 nm LED CHIP
F
F
F
F
F
F
F
O
High-Power & Current GaAs Infrared Emitters
r
The PDI-E911 infrared emitting
= 100 mA
= 100 mA
= 50 mA
= 50 mA
= 100 mA
= 100 mA
= 100 mA
C unless otherwise noted)
= -3.0 V
TYPICAL POWER OUTPUT
DEGRADATION CURVE
(TA=25
MIN
Peak Wavelength 940
.019 [0.48] SQ
-65
CATHODE
I
.045 [1.1]
.030 [0.8]
F
IN AMPS
Ø.215 [5.5]
Ø.207 [5.3]
O
C unless otherwise noted)
C L
45°
MAX
+125
+260
360
180
3.0
3.0
C L
.047 [1.2]
.035 [0.9]
WINDOW CAP
(WELDED)
MIN
Ø.188 [4.8]
Ø.178 [4.5]
925
1.0
TO-46 HERMETIC CAN PACKAGE
80
UNITS
mW
O
mA
o
o
A
V
C
C
HALF INTENSITY BEAM ANGLE
TYP
1.35
940
.170 [4.3]
.132 [3.4]
5.0
0.6
1.1
1.5
50
nm,Type PDI-E911
APPLICATIONS
TYPICAL RADIATION PATTERN
Photoelectric switches
Reflective switches
Smoke detectors
.028 [0.7] MAX
INDUSTRY EQUIVALENTS
TEMT55F (A-D)
ANODE & CASE
2X 1.000 [25.4]
BEAM ANGLE, (deg)
MAX
.015 [0.38] MAX
1.75
955
2X Ø .019 [0.5]
10
SPECTRAL OUTPUT
HEADER
TEMPERATURE,
CATHODE
.100 [2.54]
UNITS
Ohms
mW
m m A
µ µ S
m m S
nm
nm
º
V
C
L C
C L

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