591-2101-013F Dialight, 591-2101-013F Datasheet

LED PRISM 3MM RA ALGAAS RED SMT

591-2101-013F

Manufacturer Part Number
591-2101-013F
Description
LED PRISM 3MM RA ALGAAS RED SMT
Manufacturer
Dialight
Series
591r

Specifications of 591-2101-013F

Color
Red
Voltage Rating
1.8V
Current
20mA
Lens Type
Diffused, White
Lens Style/size
Round, 3mm, T-1
Configuration
Single
Mounting Type
Surface Mount, Right Angle
Led Size
3 mm
Illumination Color
Red
Lens Color/style
Red Diffused
Operating Current
200 mA
Operating Voltage
2.4 V
Viewing Angle
40 deg
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
350-1786-2
5912101013F
Features
Table 1. Selection Guide
Note
Cypress Semiconductor Corporation
Document Number: 001-57344 Rev. *A
Maximum Operating Frequency
Maximum Operating Current
1. The Cypress QDR-II+ devices surpass the QDR consortium specification and can support V
18 Mbit Density (512K x 36)
550 MHz Clock for High Bandwidth
2-word Burst for reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces
(data transferred at 1100 MHz) at 550 MHz
Available in 2.5 Clock Cycle Latency
Two Input Clocks (K and K) for precise DDR Timing
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Data Valid Pin (QVLD) to indicate valid Data on the Output
On-Die Termination (ODT) feature
Synchronous internally Self-timed Writes
DDR II+ operates with 2.5 Cycle Read Latency when DOFF is
asserted HIGH
Operates similar to DDR I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
Core V
HSTL Inputs and Variable Drive HSTL Output Buffers
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible Test Access Port
Phase-Locked Loop (PLL) for accurate Data Placement
SRAM uses rising edges only
Supported for D
Supports both 1.5V and 1.8V I/O supply
DD
= 1.8V ± 0.1V; I/O V
[x:0]
Description
, BWS
[x:0]
DDQ
, and K/K inputs
= 1.4V to V
Architecture (2.5 Cycle Read Latency) with ODT
198 Champion Court
DD
[1]
x18
x36
x8
x9
550 MHz
550
740
740
760
970
18-Mbit DDR II+ SRAM 2-Word Burst
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C21701KV18 – 512K x 36
Functional Description
The CY7C21701KV18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR II+ architecture. The DDR II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of K and K. Each address location is associated with two 36-bit
words that burst sequentially into or out of the device.
These devices have an On-Die Termination feature supported
for D
external termination resistors, reduce cost, reduce board area,
and simplify board routing.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
This device is down bonded from the 65 nm 72M QDRII device
and hence have the same I
the equivalent 72M device option. For details refer to the appli-
cation note AN53189, 65 nm Technology Interim QDRII/DDRII
SRAM device family description.
[x:0]
DDQ
500 MHz
, BWS
500
690
690
700
890
= 1.4V to V
San Jose
[x:0]
DD
, and K/K inputs, which helps eliminate
,
.
CA 95134-1709
450 MHz
450
630
630
650
820
DD
/I
SB1
CY7C21701KV18
values and JTAG ID code as
Revised March 08, 2010
400 MHz
400
580
580
590
750
408-943-2600
MHz
Unit
mA
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Related parts for 591-2101-013F

591-2101-013F Summary of contents

Page 1

Features 18 Mbit Density (512K x 36) ■ 550 MHz Clock for High Bandwidth ■ 2-word Burst for reducing Address Bus Frequency ■ Double Data Rate (DDR) Interfaces ■ (data transferred at 1100 MHz) at 550 MHz Available in 2.5 ...

Page 2

Logic Block Diagram (CY7C21701KV18 (17:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [3:0] Document Number: 001-57344 Rev. *A Write Write Reg Reg Output Logic Control Read Data Reg Reg. ...

Page 3

Contents Features............................................................................. 1 Configurations .................................................................. 1 Functional Description..................................................... 1 Logic Block Diagram (CY7C21701KV18)........................ 2 Contents ............................................................................ 3 Pin Configuration ............................................................. 4 165-Ball FBGA ( 1.4 mm) Pinout .................. 4 Pin Definitions .................................................................. 5 Functional Overview ........................................................ 7 ...

Page 4

Pin Configuration The pin configuration for CY7C21701KV18 follows NC/144M NC/36M B NC DQ27 DQ18 DQ28 D NC DQ29 DQ19 DQ20 F NC DQ30 DQ21 G NC DQ31 DQ22 H ...

Page 5

Pin Definitions Pin Name I/O DQ Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write [35:0] Synchronous operations. These pins drive out the requested data when the read ...

Page 6

Pin Definitions (continued) Pin Name I/O TDO Output TDO for JTAG. TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to ...

Page 7

Functional Overview The CY7C21701KV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of two and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to ...

Page 8

Valid Data Indicator (QVLD) QVLD is provided on the DDR II+ to simplify data capture on high speed systems. The QVLD is generated by the DDR II+ device along with data output. This signal is also edge aligned with the ...

Page 9

Truth Table The truth table for the CY7C21701KV18 follows. Operation Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. Read Cycle: (2.5 cycle Latency) Load address; wait two and half cycles; read ...

Page 10

IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V I/O logic levels. ...

Page 11

IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR ...

Page 12

TAP Controller State Diagram The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 TEST-LOGIC/ 0 IDLE Note 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document ...

Page 13

TAP Controller Block Diagram Selection TDI Circuitry TCK TMS TAP Electrical Characteristics [12, 13, 14] Over the Operating Range Parameter Description V Output HIGH Voltage OH1 V Output HIGH Voltage OH2 V Output LOW Voltage OL1 V Output LOW Voltage ...

Page 14

TAP AC Switching Characteristics [15, 16] Over the Operating Range Parameter t TCK Clock Cycle Time TCYC t TCK Clock Frequency TF t TCK Clock HIGH TH t TCK Clock LOW TL Setup Times t TMS Setup to TCK Clock ...

Page 15

Identification Register Definitions Instruction Field Revision Number (31:29) Cypress Device ID (28:12) Cypress JEDEC ID (11:1) ID Register Presence (0) Scan Register Sizes Register Name Instruction Bypass ID Boundary Scan Instruction Codes Instruction Code EXTEST 000 IDCODE 001 SAMPLE Z ...

Page 16

Boundary Scan Order Bit # Bump ID Bit # 11P 37 10 ...

Page 17

Power Up Sequence in DDR II+ SRAM DDR II+ SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. Power Up Sequence Apply power and drive DOFF either HIGH or LOW (All other ■ inputs ...

Page 18

Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature .................................. -65°C to +150°C Ambient Temperature with Power Applied... -55°C to +125°C Supply Voltage on V Relative to GND ...

Page 19

Electrical Characteristics (continued) DC Electrical Characteristics [14] Over the Operating Range Parameter Description [21] V Operating Supply Automatic Power down SB1 Current AC Electrical Characteristics [13] Over the Operating Range Parameter Description V Input HIGH Voltage ...

Page 20

Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description C Input Capacitance IN C Output Capacitance O Thermal Resistance Tested initially and after any design or process change that may affect these ...

Page 21

Switching Characteristics [22, 23] Over the Operating Range Cypress Consortium Parameter Parameter t V (Typical) to the First Access POWER Clock Cycle Time CYC KHKH t t Input Clock (K/K) HIGH KH KHKL t t Input ...

Page 22

Switching Waveforms Read/Write/Deselect Sequence Figure 5. Waveform for 2.5 Cycle Read Latency NOP READ READ CYC KHKH R ...

Page 23

Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at http://www.cypress.com/products Cypress maintains a ...

Page 24

Document History Page Document Title: CY7C21701KV18, 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Document Number: 001-57344 Orig. of Submission Rev. ECN Change ** 2798874 VKN/AESA 11/04/09 *A 2888780 NJY 03/08/2010 Sales, Solutions, and Legal ...

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