SI3215MDCQX-EVB Silicon Laboratories Inc, SI3215MDCQX-EVB Datasheet - Page 12

• Manufacturer Part Number: SI3215MDCQX-EVB
• Description: DAUGHTER CARD W/DISCRETE INTRFC
• Manufacturer: Silicon Laboratories Inc
• Series: ProSLIC®r

Specifications of SI3215MDCQX-EVB

• Main Purpose: Interface, Analog Front End (AFE)
• Utilized Ic / Part: Si3215
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 7. Si321x DC Characteristics, V
(V
Table 6. Si321x DC Characteristics, V
(V
Si3215
Table 5. Monitor ADC Characteristics
(V
12
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Parameter
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (voltage)
Gain Error (current)
DDA
DDA
DDA
, V
, V
, V
DDD
DDD
DDD
= 3.13 to 3.47 V, T
= 4.75 to 5.25 V, T
= 3.13 to 5.25 V, T
A
A
Symbol
A
Symbol
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
DNLE
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
V
INLE
V
V
V
V
V
I
V
OH
V
OL
IH
L
IL
I
OH
OL
L
IH
IL
SDO,INT,DTX:I
DDA
SDO, DTX:I
DDA
SDITHRU:I
SDO,INT,DTX:I
DOUT: I
SDO, DTX:I
SDITHRU: I
Test Condition
Test Condition
DOUT: I
Test Condition
= V
= V
SDITHRU:
I
O
SDITHRU:
I
= 4 mA
O
O
DDD
DDD
Rev. 0.92
= 2 mA
= –40 mA
O
O
O
= –40 mA
= –4 mA
= –8 mA
O
O
O
= 3.3 V
= 5.0 V
= –4 mA
= 8 mA
=–2 mA
O
= 4 mA
0.7 x V
V
V
DDD
DDD
0.7 x V
V
V
–1/2
Min
DDD
DDD
Min
–10
–1
—
—
—
—
Min
–10
– 0.6
– 0.8
—
—
DDD
– 0.6
– 0.8
DDD
Typ
Typ
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.3 x V
0.3 x V
Max
Max
Max
1/2
0.4
10
20
0.4
10
—
—
—
10
—
—
—
D
1
D
DD
DD
Unit
LSB
LSB
Unit
Unit
µA
%
%
µA
V
V
V
V
V
V
V
V
V
V