2SD1733 Guangdong Kexin Industrial, 2SD1733 Datasheet
2SD1733
Manufacturer Part Number
2SD1733
Description
Power Transistor
Manufacturer
Guangdong Kexin Industrial
Datasheet
1.2SD1733.pdf
(1 pages)
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www.DataSheet4U.com
SMD Type
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Pw=20ms.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Features
Absolute Maximum Ratings Ta = 25
h
High V
High I
Good hFE linearity .
Low V
Epitaxial planer type
NPN silicon transistor
Electrical Characteristics Ta = 25
FE
Rank
h
Classification
FE
C
CE (sat)
CEO
, I
C
Parameter
=1A (DC) .
, V
.
CEO
=80V .
82 180
Parameter
P
Tc = 25
120 270
Q
Power Transistor
180 390
Symbol
V
BV
BV
BV
I
R
C
I
I
CE(sat)
h
C
CBO
EBO
Symbol
f
(Pulse) *
FE
CBO
CEO
EBO
T
ob
V
V
V
2SD1733
T
P
CBO
CEO
EBO
I
T
stg
C
C
j
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
=50ìA
=50ìA
=1mA
=500mA,I
=4V
=100V
=3V,I
=10V, I
=10V, I
-55 to +150
C
=0.5A
Rating
E
E
B
= -50mA, f=100MHz
=0A, f=1MHz
120
150
=20mA
Testconditons
80
10
5
1
2
1
2.3
6.50
4.60
5.30
+0.15
-0.15
+0.15
-0.15
+0.2
-0.2
0.80
Unit
W
W
TO-252
V
V
V
A
A
+0.1
-0.1
0.60
+0.1
-0.1
0.127
max
0.50
+0.8
-0.7
Min
120
80
82
5
www.kexin.com.cn
2.30
Transistors
+0.1
-0.1
0.15
Typ
100
20
Max
390
0.4
Unit: mm
1
1
1 Base
2 Collector
3 Emitter
MHz
Unit
ìA
ìA
pF
V
V
V
V
1
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