2SC3265 Guangdong Kexin Industrial, 2SC3265 Datasheet
2SC3265
Manufacturer Part Number
2SC3265
Description
Silicon NPN Epitaxial
Manufacturer
Guangdong Kexin Industrial
Datasheet
1.2SC3265.pdf
(1 pages)
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Manufacturer:
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www.DataSheet4U.com
SMD Type
SMD Type
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Features
High DC current gain: h
Low saturation voltage: V
(I
h
Absolute Maximum Ratings Ta = 25
Electrical Characteristics Ta = 25
C
FE
Marking
= 500 mA, I
hFE
Classification
Parameter
B
= 20 mA).
100 200
Parameter
EO
FE
CE (sat)
(1) = 100320.
= 0.4 V (max)
160 320
EY
Silicon NPN Epitaxial
V
V
Symbol
V
(BR) CEO
(BR) EBO
CE (sat)
I
I
V
h
C
CBO
EBO
f
Symbol
FE
BE
T
ob
2SC3265
V
V
V
T
P
CBO
CEO
EBO
I
I
Tj
stg
C
B
C
V
V
I
I
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CB
= 0.1 mA, I
= 10 mA, I
= 500 mA, I
= 50 V, IC = 0
= 30 V, I
= 1 V, I
= 1 V, I
= 5 V, I
= 10 V, I
-55 to +150
Rating
C
C
C
800
160
200
150
Testconditons
B
E
E
30
25
C
= 100 mA
= 10 mA
= 10 mA
5
B
= 0
= 0
= 0, f = 1 MHz
= 0
= 20 mA
mW
Unit
mA
mA
V
V
V
1
0.95
SOT-23
3
+0.1
-0.1
2.9
0.4
1.9
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
Min
100
0.5
25
5
www.kexin.com.cn
Transistors
2
Typ
120
13
Max
320
0.1
0.1
0.4
0.8
1.Base
2.Emitter
3.collector
Unit: mm
IC
0.1
MHz
Unit
ìA
ìA
+0.05
-0.01
pF
V
V
V
V
1
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