2SC3265 Guangdong Kexin Industrial, 2SC3265 Datasheet
2SC3265
Manufacturer Part Number
2SC3265
Description
Silicon NPN Epitaxial
Manufacturer
Guangdong Kexin Industrial
Datasheet
1.2SC3265.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC3265
Manufacturer:
toshiba
Quantity:
30 000
Company:
Part Number:
2SC3265-O
Manufacturer:
FUJI
Quantity:
732
Part Number:
2SC3265-O
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2SC3265-O(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SC3265-Y
Manufacturer:
TOSHIBA
Quantity:
74 000
Part Number:
2SC3265-Y
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SC3265-Y(T5LND)
Manufacturer:
TI
Quantity:
76
Part Number:
2SC3265-Y(T5LND)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2SC3265-Y(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SC3265-Y(TE85R)
Manufacturer:
NIPPON
Quantity:
1 000
www.DataSheet4U.com
SMD Type
SMD Type
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Features
High DC current gain: h
Low saturation voltage: V
(I
h
Absolute Maximum Ratings Ta = 25
Electrical Characteristics Ta = 25
C
FE
Marking
= 500 mA, I
hFE
Classification
Parameter
B
= 20 mA).
100 200
Parameter
EO
FE
CE (sat)
(1) = 100320.
= 0.4 V (max)
160 320
EY
Silicon NPN Epitaxial
V
V
Symbol
V
(BR) CEO
(BR) EBO
CE (sat)
I
I
V
h
C
CBO
EBO
f
Symbol
FE
BE
T
ob
2SC3265
V
V
V
T
P
CBO
CEO
EBO
I
I
Tj
stg
C
B
C
V
V
I
I
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CB
= 0.1 mA, I
= 10 mA, I
= 500 mA, I
= 50 V, IC = 0
= 30 V, I
= 1 V, I
= 1 V, I
= 5 V, I
= 10 V, I
-55 to +150
Rating
C
C
C
800
160
200
150
Testconditons
B
E
E
30
25
C
= 100 mA
= 10 mA
= 10 mA
5
B
= 0
= 0
= 0, f = 1 MHz
= 0
= 20 mA
mW
Unit
mA
mA
V
V
V
1
0.95
SOT-23
3
+0.1
-0.1
2.9
0.4
1.9
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
Min
100
0.5
25
5
www.kexin.com.cn
Transistors
2
Typ
120
13
Max
320
0.1
0.1
0.4
0.8
1.Base
2.Emitter
3.collector
Unit: mm
IC
0.1
MHz
Unit
ìA
ìA
+0.05
-0.01
pF
V
V
V
V
1