2SJ325 Guangdong Kexin Industrial, 2SJ325 Datasheet

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2SJ325

Manufacturer Part Number
2SJ325
Description
MOS Field Effect Power Transistors
Manufacturer
Guangdong Kexin Industrial
Datasheet

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www.DataSheet.co.kr
SMD Type
SMD Type
Drain to source voltage
Gate to source voltage (DC)
Gate to source voltage (AC)
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
Features
Absolute Maximum Ratings Ta = 25
Low on-state resistance
R
R
Built-in G-S Gate Protection Diode
DS(on)
DS(on)
=83m (V
=0.15 (V
10
s; d
GS
GS
Parameter
=-10V,I
=-4V,I
1%.
T
T
C
A
=25
=25
D
MOS Field Effect Power Transistors
D
=-1.6A)
=-2A)
Symbol
V
V
V
T
T
2SJ325
P
GSS
GSS
DSS
I
I
D
D
stg
ch
D
-55 to +150
-20,+10
Rating
150
-30
1.0
20
4.0
20
16
2.3
6.50
4.60
5.30
+0.15
-0.15
+0.15
-0.15
+0.2
-0.2
0.80
TO-252
+0.1
-0.1
Unit
V
V
V
W
W
A
A
0.60
+0.1
-0.1
0.127
max
0.50
+0.8
-0.7
2.30
www.kexin.com.cn
+0.1
-0.1
MOSFET
Unit: mm
1 Gate
2 Drain
3 Source
IC
1
Datasheet pdf - http://www.DataSheet4U.net/

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2SJ325 Summary of contents

Page 1

... GS D Built-in G-S Gate Protection Diode Absolute Maximum Ratings Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation T = =25 A Channel temperature Storage temperature * 1%. 2SJ325 TO-252 6.50 +0.15 -0.15 5.30 +0.2 -0.2 0.127 max 0.80 +0.1 -0.1 0.60 2.3 +0.1 -0.1 4.60 +0.15 -0.15 Symbol Rating Unit ...

Page 2

... Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery time Reverse Recovery Charge 2 www.kexin.com.cn 2SJ325 Symbol Testconditons I V =-30V,V =0 DSS 16V,V ...

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