2SJ360 Guangdong Kexin Industrial, 2SJ360 Datasheet
2SJ360
Manufacturer Part Number
2SJ360
Description
MOS Field Effect Transistors
Manufacturer
Guangdong Kexin Industrial
Datasheet
1.2SJ360.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ360
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SJ360(TE12L
Manufacturer:
Toshiba
Quantity:
1 364
Part Number:
2SJ360(TE12L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
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SMD Type
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
Features
Absolute Maximum Ratings Ta = 25
Low on-state resistance
R
High forward transfer admittance :|Y
Low leakage current :I
DS(on)
=0.55 (V
10
s; d
GS
Parameter
=-4V,I
1%.
DSS
D
=-100 A Max.)(V
=-1.0A)
MOS Field Effect Transistors
fs
|=0.9S(Typ.)
DS
=-60V)
Symbol
V
V
T
T
2SJ360
P
GSS
DSS
I
I
D
D
stg
ch
D
-55 to +150
Rating
150
-60
0.5
-1
-3
20
0.48
+0.1
-0.1
1
SOT-89
2
Unit
1.80
4.50
3.00
V
V
W
A
A
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
0.53
3
+0.1
-0.1
www.kexin.com.cn
MOSFET
0.44
1.50
+0.1
-0.1
+0.1
-0.1
Unit: mm
1. Source
2. Drain
3. Gate
1 Gate
2 Drain
3 Source
1. Base
2. Collector
3. Emiitter
1
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2SJ360 Summary of contents
Page 1
... Low leakage current :I =-100 A Max.)(V DSS Absolute Maximum Ratings Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * 1%. MOS Field Effect Transistors 2SJ360 |=0.9S(Typ.) fs =-60V) DS Symbol Rating V -60 DSS V 20 GSS ...
Page 2
... Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Contimuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Marking Marking Z8 2 www.kexin.com.cn 2SJ360 Symbol Testconditons I V =-60V,V =0 DSS 16V,V =0 ...