2SJ360 Guangdong Kexin Industrial, 2SJ360 Datasheet - Page 2

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2SJ360

Manufacturer Part Number
2SJ360
Description
MOS Field Effect Transistors
Manufacturer
Guangdong Kexin Industrial
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ360
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2SJ360(TE12L
Manufacturer:
Toshiba
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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2
SMD Type
www.kexin.com.cn
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate Drain Charge
Contimuous drain reverse current
Pulse drain reverse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Electrical Characteristics Ta = 25
Marking
Marking
Parameter
Z8
Symbol
R
V
t
t
I
I
I
C
C
DS(on)
C
Q
Q
d(on)
d(off)
Qrr
DSS
GSS
V
I
DRP
Y
Q
DSF
trr
DR
t
t
rss
iss
oss
gs
gd
th
fs
r
f
g
2SJ360
V
V
V
V
V
V
V
V
R
V
I
I
DR
DR
DS
GS
DS
DS
GS
GS
DS
GS(on)
GS
L
=60
=-1A,V
=-1A,V
=-60V,V
=-10V,I
=-10V,I
=-10V,V
= 16V,V
=-4V,I
=-10V,I
=-10V,I
=-10V,V
D
GS
GS
D
D
=-0.5A
D
D
GS
GS
=-1mA
=-0.5A
=-0.5A
=-1A,V
=0V
=0V,d
Testconditons
DS
=0
=0,f=1MHZ
DD
=0
=-30V,I
i
/d
DD
t
=50A/
=-48V
D
=--0.5A
s
-0.8
Min
0.5
0.86
0.55
155
100
Typ
0.9
6.5
4.5
2.0
20
75
20
17
20
MOSFET
Max
0.73
100
-2.0
1.2
1.7
50
50
-1
-3
10
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
A
A
V
A
c
A

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