ALD1107 Advanced Linear Devices, ALD1107 Datasheet

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ALD1107

Manufacturer Part Number
ALD1107
Description
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
Manufacturer
Advanced Linear Devices
Datasheet
ORDERING INFORMATION
* Contact factory for industrial temperature range.
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC operating environment. The ALD1107/ALD1117 are
builiding blocks for differential amplifier input stages, transmission gates,
multiplexer applications, current sources, current mirrors and other preci-
sion analog circuits.
FEATURES
• Low threshold voltage of -0.7
• Low input capacitance
• Low V
• High input impedance -- 10
• Low input and output leakage currents
• Negative current (I
• Enhancement-mode (normally off)
• DC current gain 10
• Low input and output leakage currents
BLOCK DIAGRAM
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
G
P1
-55 C to +125 C
8-Pin CERDIP
Package
ALD1117 DA
14-Pin CERDIP
Package
ALD1107 DB
(2)
OS
D
P1
S
2mV typical
P1
(1)
A
L
D
(3)
INEAR
DVANCED
EVICES,
V + (11)
Operating Temperature Range*
DS
9
S
D
P2
P2
I
) temperature coefficient
NC.
(12)
(14)
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
G
0 C to +70 C
8-Pin Plastic Dip
Package
ALD1117PA
14-Pin Plastic Dip
Package
ALD1107 PB
P2
14
ALD1107
(13)
~
typical
V - (4)
G
P3
(9)
D
P3
S
(10)
P3
(8)
0 C to +70 C
8-Pin SOIC
Package
ALD1117 SA
14-Pin SOIC
Package
ALD1107 SB
V + (11)
S
D
P4
P4
(7)
(5)
G
P4
(6)
APPLICATIONS
• Precision current sources
• Precision current mirrors
• Voltage Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Precision analog signal processing
PIN CONFIGURATION
BLOCK DIAGRAM
G P4
G P1
G P1
D P4
D P1
D P1
S P4
S P1
S P1
V
V
-
-
G
P1
4
4
1
2
3
1
2
3
5
6
7
(2)
DA, PA, SA PACKAGE
DB, PB, SB PACKAGE
D
P1
S
P1
(1)
(3)
ALD1117
ALD1107
ALD1117
V+ (5)
ALD1107/ALD1117
~
V - (4)
S
D
P2
P2
(6)
(8)
G
13
12
11
10
14
P2
8
9
8
6
5
7
(7)
D P3
S P3
D P2
G P2
S P2
V
G P3
D P2
G P2
S P2
V
+
+
1
1

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ALD1107 Summary of contents

Page 1

... These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD1107/ALD1117 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other preci- sion analog circuits ...

Page 2

... Mismatch Drain Source Breakdown BV -12 DSS Voltage Off Drain I DS (OFF) Current 1 Gate Leakage I GSS Current Input C ISS Capacitance 2 1 Notes: Consists of junction leakage currents 2 Sample tested parameters ALD1107/ALD1117 ALD1107 ALD1117 Typ Max Min -0.7 -1.0 -0 -1.3 -2 -1.3 0.67 0.25 0.5 40 1200 1800 0.5 -12 10 400 4 0 ...

Page 3

... DS 0.02 0. DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE R vs. GATE SOURCE VOLTAGE DS (ON) 100 GATE SOURCE VOLTAGE (V) ALD1107/ALD1117 V = -12V GS -10V -8V -6V -4V - -10 - -5mA +125 -10 - +125 -10 ...

Page 4

... R SET 1/2 ALD1107 or ALD1117 I SET OUT Q SET Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL +5V 1/2 ALD1107 or ALD1117 SET SET 1/4 ALD1106 or 1/2 ALD1116 OFF Channel MOSFET Channel MOSFET 3, 4 CURRENT SOURCE MULTIPLICATION ...

Page 5

... SET 1 SET SET CASCODE CURRENT SOURCES + SET SET Advanced Linear Devices P- CHANNEL CURRENT SOURCE +5V 1/2 ALD1107 or ALD1117 SOURCE I R SET SET Channel MOSFET +5V ALD1107 ...

Page 6

...

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