ald111933 Advanced Linear Devices Inc (ALD), ald111933 Datasheet

ald111933

Manufacturer Part Number

ald111933

Description

Dual N-channel Enhancement Mode Epad Matched Pair Mosfet Array

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD111933.pdf (2 pages)

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GENERAL DESCRIPTION

ALD111933 are monolithic dual N-Channel MOSFETs matched at the

factory using ALD’s proven EPAD® CMOS technology. These devices are

intended for low voltage, small signal applications.

ALD111933 MOSFETs are designed and built with exceptional device

electrical characteristics matching. Since these devices are on the same

monolithic chip, they also exhibit excellent tempco tracking characteris-

tics. Each device is versatile as a circuit element and is a useful design

component for a broad range of analog applications. They are basic build-

ing blocks for current sources, differential amplifier input stages, transmis-

sion gates, and multiplexer applications. For most applications, connect

V- and N/C pins to the most negative voltage potential in the system. All

other pins must have voltages within these voltage limits.

The ALD111933 devices are built for minimum offset voltage and differen-

tial thermal response, and they are designed for switching and amplifying

applications in +3.0V to +10V systems where low input bias current, low

input capacitance and fast switching speed are desired. Since these are

MOSFET devices, they feature very large (almost infinite) current gain in

a low frequency, or near DC, operating environment.

The ALD111933 are suitable for use in precision applications which re-

quire very high current gain, beta, such as current mirrors and current

sources. The high input impedance and the high DC current gain of the

Field Effect Transistors result in extremely low current loss through the

control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example, DC

beta of the device at a drain current of 3mA and input leakage current of

30pA at 25°C is = 3mA/30pA = 100,000,000.

ORDERING INFORMATION

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +3.3V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

8-Pin

Plastic Dip

Package

ALD111933PAL

GS(th)

match to 20mV

INEAR

DVANCED

EVICES,

Operating Temperature Range*

8-Pin

MSOP

Package

ALD111933MAL

NC.

(“L”suffix for lead free version)

0°C to +70°C

Ω typical

DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

GS(th)

temperature coefficient

MATCHED PAIR MOSFET ARRAY

8-Pin

SOIC

Package

ALD111933SAL

PIN CONFIGURATION

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches

• Low current voltage clamps

• Voltage detectors

• Capacitive probes

• Sensor interfaces

• Peak detectors

• Level shifters

• Multiple preset voltage hysteresis circuits

(with other V GS (th) EPAD MOSFETS)

• Energy harvesting circuits

• Zero standby power voltage monitors

N/C*

*N/C pin is internally connected.

Connect to V- to reduce noise

V -

MA, PA, SA PACKAGES

ALD111933

V -

ALD111933

GS(th)

V -

= +3.3V

EPAD

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ald111933 Summary of contents

Page 1

... MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD111933 are suitable for use in precision applications which re- quire very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate ...

Page 2

... Drain Source Breakdown Voltage BV DSX Drain Source Leakage Current (OFF) Gate Leakage Current 1 I GSS Input Capacitance C ISS Transfer Reverse Capacitance C RSS Turn-on Delay Time t on Turn-off Delay Time t off Crosstalk Notes: Consists of junction leakage currents 1 ALD111933 ALD111933 Min Typ 3.25 3 -1.7 0.0 +1.6 6.9 3.0 1.4 1.8 68 500 0 2.5 ...

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