BC449 ON Semiconductor, BC449 Datasheet

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BC449

Manufacturer Part Number
BC449
Description
TRANSISTOR NPN 100V 300MA TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC449

Transistor Type
NPN
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
Total Device Dissipation
Operating and Storage Junction
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
Thermal Resistance,
Thermal Resistance,
Pb−Free Packages are Available*
BC447
BC449, BC449A
BC447
BC449, BC449A
@ T
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
Junction−to−Ambient
Junction−to−Case
A
C
= 25°C
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
MSL: 1
Value
Max
83.3
100
100
300
625
NA
200
5.0
5.0
1.5
80
80
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
BC447
BC447G
BC449
BC449G
BC449A
BC449AG
Device
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
2
BC44x = Device Code
A
Y
WW
G
3
MARKING DIAGRAM
BASE
http://onsemi.com
2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
AYWW G
x = 7 or 9
COLLECTOR
44x
BC
EMITTER
Publication Order Number:
G
1
3
STYLE 17
CASE 29
TO−92
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
Shipping
BC447/D

Related parts for BC449

BC449 Summary of contents

Page 1

... BC447, BC449, BC449A High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage BC447 BC449, BC449A Collector-Base Voltage BC447 BC449, BC449A Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ T = 25°C A Derate above 25°C ...

Page 2

... Vdc) (Note DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product ( mAdc 5.0 Vdc 100 MHz Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2% BC447, BC449, BC449A (T = 25°C unless otherwise noted) A BC447 BC449, BC449A BC447 BC449, BC449A BC447 BC449, BC449A BC447, BC449 ...

Page 3

... Figure 3. Switching Times 300 T = 125°C J 200 25°C 100 −55° −5 −0.2 −0.5 −1.0 −2.0 −5.0 − COLLECTOR CURRENT (mA) C Figure 5. DC Current Gain BC447, BC449, BC449A 40 −5 8.0 6.0 4.0 2.0 −50 −70 −100 −0.1 −0.2 −1 − −700 −500 I ...

Page 4

... D = 0.5 0.5 0.2 0.3 0.1 0.2 0.05 0.1 0.01 0.02 SINGLE PULSE 0.07 0.05 SINGLE PULSE 0.03 0.02 0.01 1.0 2.0 5 BC447, BC449, BC449A −1 −1.4 200 mA 100 mA −1.8 R FOR V qVB −2.2 −2.6 −3.0 0.2 0.5 5 Figure 8. Base−Emitter Temperature ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com BC447, BC449, BC449A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ...

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