irf1310n International Rectifier Corp., irf1310n Datasheet

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irf1310n

Manufacturer Part Number
irf1310n
Description
100v Single N-channel Hexfet Power Mosfet In A To-220ab Package
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Max.
TO-220AB
160
± 20
140
420
1.1
5.0
42
30
22
16
IRF1310N
®
R
Power MOSFET
DS(on)
V
Max.
0.95
–––
62
DSS
I
D
= 42A
PD - 91504A
= 0.036
= 100V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
A
V
5/14/98

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irf1310n Summary of contents

Page 1

... CS R Junction-to-Ambient JA HEXFET TO-220AB Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91504A IRF1310N ® Power MOSFET V = 100V DSS R = 0.036 DS(on 42A D Units 140 160 W 1.1 W/°C ± 20 ...

Page 2

... IRF1310N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 100 0.1 100 V Fig 2. Typical Output Characteristics 3.0 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 9.0 10 Junction Temperature ( C) Fig 4. Normalized On-Resistance IRF1310N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20us PULSE WIDTH 175 Drain-to-Source Voltage ( 10V 100 120 140 160 180 ...

Page 4

... IRF1310N 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 10 1 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1310N D.U. µ d(off ...

Page 6

... IRF1310N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1000 800 ...

Page 7

... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRF1310N DD * ...

Page 8

... IRF1310N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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