IRF3709Z IRF [International Rectifier], IRF3709Z Datasheet

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IRF3709Z

Manufacturer Part Number
IRF3709Z
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

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Applications
l
l
l
l
Benefits
www.irf.com
Notes  through
Absolute Maximum Ratings
V
V
I
I
I
P
P
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
@ T
@ T
and Current
High Frequency Synchronous Buck
Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB Mount)
at 4.5V V
are on page 12
GS
Parameter
Parameter
i
GS
GS
@ 10V
@ 10V
g
TO-220AB
IRF3709Z
V
30V
DSS
Typ.
–––
–––
300 (1.6mm from case)
10 lbf
-55 to + 175
HEXFET Power MOSFET
y
R
Max.
in (1.1N
87
62
0.53
± 20
350
30
79
40
IRF3709ZS
DS(on)
h
h
6.3m :
D
2
Pak
y
m)
Max.
1.89
IRF3709ZS
40
IRF3709ZL
max Qg
IRF3709Z
IRF3709ZL
TO-262
17nC
Units
Units
W/°C
°C/W
°C
W
V
A
1/16/04
1

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IRF3709Z Summary of contents

Page 1

... GS @ 10V GS 300 (1.6mm from case) Typ. i ––– g ––– IRF3709Z IRF3709ZS IRF3709ZL HEXFET Power MOSFET R max Qg DS(on) 6.3m : 17nC 2 D Pak TO-262 IRF3709ZS IRF3709ZL Max. Units 30 V ± 350 0.53 W/°C - 175 ° lbf in (1 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 100 3.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.05 ...

Page 6

125°C 7.00 6. 25°C 5.00 4.00 10.0 20.0 30.0 40.0 50 Drain Current (A) Fig 12. On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. Vds 50KΩ .2µF ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10% V Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING ...

Page 10

Dimensions are shown in millimeters (inches) 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9 Ã'!# 6TT H7G 9ÃPIÃXXÃ!Ã! DIÃUC Ã6TT H7G`ÃGDI ÃÅGÅ 10 DIU SI6UDPI6G S 8UDAD S A$"T GPBP 6TT H7G` GPUÃ8P9 Q6SUÃIVH7 S 96U Ã8P9 ` 6SÃÃ2Ã! X FÃ! GDI ÃG www.irf.com ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLEC- TOR 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  ...

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