IRF614S Vishay, IRF614S Datasheet
IRF614S
Specifications of IRF614S
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IRF614S Summary of contents
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... IRF614STRL SiHF614STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRF614S, SiHF614S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF614STRRPbF a a SiHF614STR- IRF614STRR a a SiHF614STR SYMBOL LIMIT V 250 DS V ± ...
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... IRF614S, SiHF614S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... 91026_03 = 25 °C C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91026_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF614S, SiHF614S Vishay Siliconix 0 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 2.7 A ...
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... IRF614S, SiHF614S Vishay Siliconix 300 MHz iss 250 rss oss 200 150 100 Drain-to-Source Voltage ( 91026_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 125 Total Gate Charge (nC) 91026_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 C oss C rss 1 91026_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91026 S-82997-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF614S, SiHF614S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF614S, SiHF614S Vishay Siliconix 91026_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 Top 120 Bottom 100 125 25 75 100 50 Starting T , Junction Temperature (° 1.2 A 1.7 A 2.7 A 150 Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF614S, SiHF614S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...