IRF6668 International Rectifier, IRF6668 Datasheet
IRF6668
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IRF6668 Summary of contents
Page 1
... The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC- DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...
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... IRF6668 Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS ...
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... (°C/ τ 0.3173 0.000048 C τ C τ τ 2 0.5283 0.000336 3 τ τ 0.5536 0.001469 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.001 0.01 J Note ‡ IRF6668 Units W °C Units °C/W 0.1 3 ...
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... IRF6668 1000 VGS TOP 15V 10V 8.0V 7.0V BOTTOM 6.0V 100 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 10V ≤ 60µs PULSE WIDTH 100 Gate-to-Source Voltage (V) Fig 4. Typical Transfer Characteristics 10000 ...
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... 250µA 3 1.0mA 1.0A 2.0 -75 -50 - 100 125 150 Temperature ( °C ) Fig 11. Typical Threshold Voltage vs. Junction Temperature 100 BOTTOM 23A 100 Starting Junction Temperature (°C) IRF6668 25°C 80 100 TOP 4.3A 7.6A 125 150 5 ...
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... IRF6668 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 14a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 15a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 16a. Switching Time Test Circuit ...
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... This includes all recommendations for stencil and substrate designs. www.irf.com Driver Gate Drive P.W. D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel IRF6668 V =10V ...
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... IRF6668 DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL MIN CODE ...
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... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6668). For 1000 parts on 7" reel, order IRF6668TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...