IRFR4105Z International Rectifier, IRFR4105Z Datasheet

MOSFET N-CH 55V 30A DPAK

IRFR4105Z

Manufacturer Part Number
IRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR4105Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR4105Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFR4105ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105ZTRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Features
Description
HEXFET
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θJA
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Ù
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
g
@ 10V
@ 10V
d
i
(Silicon Limited)
h
G
®
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
10 lbf
IRFR4105Z
D
S
-55 to + 175
D-Pak
y
Max.
in (1.1N
0.32
± 20
120
30
21
48
29
46
®
R
IRFR4105Z
IRFU4105Z
DS(on)
Power MOSFET
V
y
m)
Max.
DSS
I
3.12
110
D
40
IRFU4105Z
= 30A
= 24.5mΩ
PD - 94752
= 55V
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRFR4105Z

IRFR4105Z Summary of contents

Page 1

... Limited 10V ™ Parameter 94752 IRFR4105Z IRFU4105Z ® HEXFET Power MOSFET 55V DSS R = 24.5mΩ DS(on 30A D S D-Pak I-Pak IRFR4105Z IRFU4105Z Max. Units 120 48 W 0.32 W/°C ± See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 1000 C oss = 800 Ciss 600 400 Coss ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 30 TOP Single Pulse BOTTOM 1% Duty Cycle 18A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 5.97 (.235) 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 2X 0.25 (.010) 0.76 (.030) 2.28 ...

Page 10

A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords