IRG4RC10K International Rectifier, IRG4RC10K Datasheet

IGBT UFAST 600V 9A D-PAK

IRG4RC10K

Manufacturer Part Number
IRG4RC10K
Description
IGBT UFAST 600V 9A D-PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10K

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.62V @ 15V, 5A
Current - Collector (ic) (max)
9A
Power - Max
38W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Package
D-Pak
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
9
Ic @ 100c (a)
5
Vce(on)@25c Typ (v)
2.39
Vce(on)@25c Max (v)
2.62
Ets Typ (mj)
0.26
Ets Max (mj)
0.32
Pd @25c (w)
38
Environmental Options
PbF
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*IRG4RC10K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4RC10K
Manufacturer:
IR
Quantity:
115
Part Number:
IRG4RC10K
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRG4RC10KD
Manufacturer:
IR
Quantity:
150
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
• Short Circuit Rated UltraFast: Optimized for high
• Generation 4 IGBT design provides higher efficiency
• Industry standard TO-252AA package
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Features
Benefits
V
I
I
I
I
t
V
E
P
P
T
T
R
R
Wt
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Rated to 10µs @ 125°C, V
than Generation 3
C
C
CM
LM
sc
operating frequencies >5.0 kHz , and Short Circuit
J
STG
CES
GE
ARV
D
D
JC
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load CurrentR
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
GE
= 15V
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
0.3 (0.01)
Typ.
–––
–––
E
C
-55 to + 150
IRG4RC10K
Max.
TO-252AA
± 20
600
9.0
5.0
18
10
34
38
15
18
D-PAK
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
Max.
–––
V
GE
3.3
50
CES
= 15V, I
PD 91735A
= 600V
= 2.39V
C
12/30/00
Units
°C/W
Units
g (oz)
= 5.0A
W
mJ
µs
°C
V
A
V
1

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IRG4RC10K Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case JC R Junction-to-Ambient (PCB mount Weight * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com IRG4RC10K Short Circuit Rated UltraFast IGBT C V CES V CE(on) typ 15V n-channel ...

Page 2

... IRG4RC10K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... Gate drive as specified Power Dissipation = 1. (Load Current = I of fundamental) RMS 100 ° 10 ° 150 15V 1 5 6.0 7.0 Fig Typical Transfer Characteristics IRG4RC10K Triangular wave: Clamp voltage: 80% of rated 1 0 °  ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE 5µs PULSE WIDTH ...

Page 4

... IRG4RC10K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02  SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 -60 -40 -20 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs Ohm 15V 480V CC 1 0.1 80 100 -60 -40 -20 ( Fig Typical Switching Losses vs. IRG4RC10K = 400V = 5. Total Gate Charge (nC) G Gate-to-Emitter Voltage 100  2 100 120 140 160 ° Junction Temperature ( Junction Temperature 20 5 ...

Page 6

... IRG4RC10K  1 Ohm 100 150 C ° 480V 15V 1.0 GE 0.8 0.6 0.4 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector Current L 50V Driver e Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre obta in rated Id. Fig. 13a - Clamped Inductive ...

Page 7

... B - 0.8 9 (.035 ) 3X 0.6 4 (.025 ) 0 .25 (. & . 982 . LLING INC H . 4 JED TLIN AX. +0 .16 (.00 6). IRG4RC10K Fig. 14b - Switching Loss Waveforms 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 6.45 (. 5.68 (. LEAD ASSIGNMENTS NTS 1 - GATE ATE 2 - COLLECTOR ...

Page 8

... IRG4RC10K Tape & Reel Information TO-252AA ILLIM ILL & - LIN -481 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 6.3 ( .641 ) 1 5.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/ ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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