IRL3103D1 International Rectifier, IRL3103D1 Datasheet

MOSFET N-CH 30V 64A TO-220AB

IRL3103D1

Manufacturer Part Number
IRL3103D1
Description
MOSFET N-CH 30V 64A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3103D1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 4.5V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL3103D1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3103D1
Manufacturer:
IR
Quantity:
132
Part Number:
IRL3103D1
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3103D1S
Manufacturer:
IR
Quantity:
800
Part Number:
IRL3103D1STRL
Manufacturer:
IR
Quantity:
1 130
Part Number:
IRL3103D1STRL
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings
Thermal Resistance
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
I
I
P
P
V
T
T
R
R
D
D
DM
J
STG
D
D
GS
@ T
@ T
JC
JA
and Schottky Diode
Copackaged HEXFET
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
@T
@T
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient
®
Power MOSFET
Parameter
Parameter
FETKY
GS
GS
@ 10V
@ 10V
TM
G
MOSFET & SCHOTTKY RECTIFIER
S
Typ.
D
300 (1.6mm from case )
–––
–––
10 lbf•in (1.1N•m)
-55 to + 150
Max.
IRL3103D1
0.56
TO-220AB
220
± 16
2.0
64
45
89
R
DS(on)
Max.
V
1.4
62
DSS
I
D
= 64A
= 0.014
PD 9.1608C
= 30V
Units
Units
W/°C
°C/W
W
°C
W
A
V
12/16/97

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IRL3103D1 Summary of contents

Page 1

... Junction-to-Case JC R Junction-to-Ambient JA TM FETKY MOSFET & SCHOTTKY RECTIFIER Max. @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– PD 9.1608C IRL3103D1 V = 30V DSS R = 0.014 DS(on 64A D TO-220AB Units 220 2 0.56 W/°C ± ° ...

Page 2

... IRL3103D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 30 VGSB 10V TOP 8.0V 6.0V 4.0V 2.0V BOTTOM 0. 0. 0.8 1.0 0 Fig 4. Typical Reverse Output Characteristics IRL3103D1 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2. µ 150° Drain-to-Source Voltage ( VGS 10V 8.0V 6.0V 4.0V 2 ...

Page 4

... IRL3103D1 4000 1MHz iss rss oss ds gd 3000 C iss 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T , Case Temperature ( C) C Fig 7. Maximum Drain Current Vs. Case Temperature SHORTED 100 Fig 6. Typical Gate Charge Vs 125 150 175 2.0 ° ...

Page 5

... I = 56A D 1.5 1.0 0.5 0.0 -60 -40 -20 Fig 9. Normalized On-Resistance 0.50 0.20 0.10 0.05 0.1 0. 0.01 0.00001 0.0001 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case V = 10V Junction T em perature (° Vs. Temperature 0.001 0. lse tio IRL3103D1 0 ...

Page 6

... IRL3103D1 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982 LLIN Part Marking Information TO-220AB ITH ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...

Page 7

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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