IRL3716 International Rectifier, IRL3716 Datasheet

MOSFET N-CH 20V 180A TO-220AB

IRL3716

Manufacturer Part Number
IRL3716
Description
MOSFET N-CH 20V 180A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3716

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
79nC @ 4.5V
Input Capacitance (ciss) @ Vds
5090pF @ 10V
Power - Max
210W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL3716
Q1265959

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3716
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3716L
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3716S
Manufacturer:
IR
Quantity:
12 500
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Benefits
l
l
l
www.irf.com
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
R
R
R
R
D
D
DM
DS
GS
D
D
J
θJC
θCS
θJA
θJA
@ T
@ T
, T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Active Oring
Converters with Synchronous Rectification
for Telecom and Industrial Use
and Current
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
Computer Processor Power
STG
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
DS(on)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Case‡
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Continuous Drain Current, V
Linear Derating Factor
are on page 11
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
TO-220AB
IRL3716
V
20V
DSS
Typ.
0.50
–––
–––
–––
HEXFET
-55 to + 175
R
IRL3716S
DS(on)
Max.
180
± 20
130
720
210
D
100
1.4
20
2
4.0mΩ
Pak
®
Power MOSFET
max
Max.
0.72
–––
62
40
IRL3716S
IRL3716L
PD - 94403A
IRL3716
IRL3716L
TO-262
180A †
Units
Units
W/°C
°C/W
°C
I
V
W
W
V
A
D
1

Related parts for IRL3716

IRL3716 Summary of contents

Page 1

... Typ. „ „ … 94403A IRL3716 IRL3716S IRL3716L ® HEXFET Power MOSFET R max I DS(on) 180A † 4.0mΩ Pak TO-262 IRL3716S IRL3716L Max. Units 20 V ± † 180 130 A 720 210 W 100 W 1.4 W/°C - 175 °C Max. Units ––– ...

Page 2

... IRL3716/3716S/3716L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000. 25°C 100. 15V 20µs PULSE WIDTH 10.00 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRL3716/3716S/3716L 10000 TOP 1000 BOTTOM 2.5V 100 100 0.1 Fig 2. Typical Output Characteristics 2 175°C 1.5 1 ...

Page 4

... IRL3716/3716S/3716L 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 100 Fig 6 ...

Page 5

... D = 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRL3716/3716S/3716L Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 ...

Page 6

... IRL3716/3716S/3716L D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1650 15V 1320 DRIVER 990 + 660 330 0 25 Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com IRL3716/3716S/3716L + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery ...

Page 8

... IRL3716/3716S/3716L Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPLE : T HIS 1010 ...

Page 9

... T HIS IS AN IRF 530S WIT CODE 8024 02, 2000 MBL Y L INE "L " Note: "P" embly line pos ition indicates "L ead-F ree" OR INT E RNAT IONAL www.irf.com IRL3716/3716S/3716L INT E RNAT IONAL IFIER F 530S L OGO MBL CODE PART NUMB 530S LOGO DAT E CODE ...

Page 10

... IRL3716/3716S/3716L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Informa- EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 LED ON WW 19, 1997 MBL Y L INE "C" Note: "P" sembly line pos ition indicates "L ead-Free" PART NUMBER INT E RNAT IONAL ...

Page 11

... Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‡ θ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRL3716/3716S/3716L 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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