IRLZ44S Vishay, IRLZ44S Datasheet

MOSFET N-CH 60V 50A D2PAK

IRLZ44S

Manufacturer Part Number
IRLZ44S
Description
MOSFET N-CH 60V 50A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRLZ44S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLZ44S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLZ44S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLZ44SPBF
Manufacturer:
TI
Quantity:
4
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
f. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91329
S10-2554-Rev. B, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 51 A, dI/dt  250 A/μs, V
= 25 V, starting T
G D
()
D
S
2
PAK (TO-263)
a
J
= 25 °C, L = 179 μH, R
f
c
b
DD
V
GS
 V
e
= 5.0 V
DS
G
, T
D
SiHLZ44S-GE3
IRLZ44SPbF
SiHLZ44S-E3
IRLZ44S
SiHLZ44S
N-Channel MOSFET
2
J
e
PAK (TO-263)
Single
 175 °C.
60
66
12
43
g
= 25 , I
d
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.028
V
GS
AS
at 5.0 V
= 51 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• R
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D
SiHLZ44STRR-GE3
IRLZ44STRRPbF
SiHLZ44STR-E3
IRLZ44STRR
SiHLZ44STR
Definition
2
PAK (TO-263)
DS(on)
2
PAK (TO-263) is a surface mount power package
Specified at V
SYMBOL
T
dV/dt
a
a
J
V
V
E
I
, T
P
device
DM
I
GS
DS
AS
D
D
a
stg
2
a
PAK (TO-263) is suitable for high current
a
IRLZ44S, SiHLZ44S
GS
design,
= 4 V and 5 V
- 55 to + 175
D
-
-
-
IRLZ44STRL
SiHLZ44STL
LIMIT
0.025
300
± 10
200
400
150
2
1.0
3.7
4.5
60
50
36
low
PAK (TO-263)
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
UNIT
W/°C
V/ns
mJ
°C
W
V
A
and
1

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IRLZ44S Summary of contents

Page 1

... ° 5 100 ° ° ° for  (see fig. 12  175 ° IRLZ44S, SiHLZ44S Vishay Siliconix Specified and device design, low on-resistance 2 PAK (TO-263) is suitable for high current 2 D PAK (TO-263 IRLZ44STRL a a SiHLZ44STL SYMBOL LIMIT ...

Page 2

... IRLZ44S, SiHLZ44S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91329 S10-2554-Rev. B, 08-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRLZ44S, SiHLZ44S Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLZ44S, SiHLZ44S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91329 S10-2554-Rev. B, 08-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91329 S10-2554-Rev. B, 08-Nov-10 IRLZ44S, SiHLZ44S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRLZ44S, SiHLZ44S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRLZ44S, SiHLZ44S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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