IXSH24N60 IXYS, IXSH24N60 Datasheet
IXSH24N60
Manufacturer Part Number
IXSH24N60
Description
IGBT 48A 600V TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXSH24N60.pdf
(2 pages)
Specifications of IXSH24N60
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
48A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
48
Ic90, Tc=90°c, Igbt, (a)
24
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.0
Rthjc, Max, Igbt, (k/w)
0.83
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSH24N60A
Manufacturer:
ST
Quantity:
4 000
Company:
Part Number:
IXSH24N60AU1
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXSH24N60B
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXSH24N60U1
Manufacturer:
IXYS
Quantity:
15 500
HiPerFAST
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
T
T
Weight
Symbol
(T
BV
V
I
s
I
V
C25
C90
CM
CES
GES
SC
© 2008 IXYS CORPORATION, All rights reserved
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
T
Mounting torque
I
I
V
V
V
I
Test Conditions
Test Conditions
R
C
C
C
GE
J
J
C
C
C
C
GE
CE
GE
CE
G
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, 1ms
= 82Ω, non repetitive
= 25°C
= 15V, T
= 15V, V
= 250μA, V
= 1.5mA, V
= 0.8 • V
= 0V
= 0V, V
= 24A, V
TM
GE
J
IGBT
CE
GE
CES
= 125°C, R
= ±20V
= 360V, T
= 15V, Note 1
CE
CE
= V
= V
GE
GE
GE
J
G
= 1MΩ
= 125°C
= 10Ω
Advance Technical Information
T
J
= 125°C
IXSH24N60
IXSH24N60A
Characteristic Values
@0.8 • V
600
-55 ... +150
-55 ... +150
Min.
4.0
Maximum Ratings
1.13 / 10
IXSH24N60
IXSH24N60A
I
CM
= 48
600
600
±20
±30
150
150
300
260
Typ.
CES
48
24
96
10
6
±100
200
Max.
7.0
2.2
2.7
Nm/lb.in.
1
mA
μA
°C
°C
°C
°C
nA
°C
μs
W
V
V
V
V
V
V
A
A
A
A
V
V
V
g
TO-247 (IXSH)
Features
Applications
Advantages
G = Gate
E = Emitter
International standard package
JEDEC TO-247AD
High frequency IGBT with guaranteed
Short Circuit SOA Capability
2nd generation HDMOS
Low V
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
(isolated mounting screw hole)
applications
V
600V
600V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Easy to mount with 1 screw
Switching speed for high frequency
High power density
CES
G
C
CE(SAT)
E
I
24A
24A
C90
C
TAB = Collector
= Collector
V
DS92809I(07/08)
TM
2.2V
2.7V
TAB
CE(sat)
process
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IXSH24N60 Summary of contents
Page 1
... @0.8 • V CES = 125° 150 -55 ... +150 150 -55 ... +150 1. 300 260 6 Characteristic Values Min. Typ. 600 4 125°C J IXSH24N60 IXSH24N60A V I CES C90 600V 24A 600V 24A TO-247 (IXSH Gate Emitter TAB = Collector A A Features A International standard package V JEDEC TO-247AD μ ...
Page 2
... CES 35 100 200 450 IXSH24N60 500 275 IXSH24N60A 2.0 IXSH24N60A 100 200 1.2 475 IXSH24N60 600 IXSH24N60A 450 IXSH24N60 4.0 3.0 IXSH24N60A 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXSH24N60 IXSH24N60A TO-247 (IXSH) Outline Max ...