NTB75N06L ON Semiconductor, NTB75N06L Datasheet

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NTB75N06L

Manufacturer Part Number
NTB75N06L
Description
MOSFET N-CH 60V 75A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB75N06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 37.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
92nC @ 5V
Input Capacitance (ciss) @ Vds
4370pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB75N06L
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTB75N06LG
Manufacturer:
ON
Quantity:
12 500
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
N−Channel TO−220 and D
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
L(pk)
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
size, (Cu Area 0.412 in
DD
= 50 Vdc, V
= 75 A, V
− Junction−to−Case
− Junction−to−Ambient (Note 1)
DS
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
GS
= 60 Vdc)
Rating
J
= 5.0 Vdc, L = 0.3 mH
= 25°C
(T
2
J
GS
).
= 25°C unless otherwise noted)
A
A
= 10 MW)
= 25°C (Note 1)
= 25°C
p
v10 ms)
A
A
p
= 25°C
= 100°C
v10 ms)
2
Symbol
PAK
T
V
V
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
I
I
DM
qJC
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"20
"15
62.5
225
214
844
260
1.4
2.4
0.7
60
60
75
50
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
2
1
NTP75N06L
AYWW
3
75 AMPERES, 60 VOLTS
Drain
A
Y
WW
G
Drain
ORDERING INFORMATION
4
2
4
G
CASE 221A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
TO−220AB
R
STYLE 5
http://onsemi.com
DS(on)
3
Source
N−Channel
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
Publication Order Number:
= 11 mW
S
Gate
1
1
75N06LG
AYWW
CASE 418B
2
Drain
Drain
NTP75N06L/D
STYLE 2
D
3
4
2
2
PAK
3
Source
4

Related parts for NTB75N06L

NTB75N06L Summary of contents

Page 1

... NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Adc Adc Reverse Recovery Time Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. NTP75N06L, NTB75N06L (T = 25°C unless otherwise noted) J Symbol V (BR)DSS = 0 Vdc Vdc ...

Page 3

... I , DRAIN CURRENT (AMPS) D Figure 3. On−Resistance vs. Gate−to−Source Voltage 37 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTP75N06L, NTB75N06L 160 4 140 120 100 3 100° 1.4 1.8 2 Figure 2. Transfer Characteristics ...

Page 4

... Figure 9. Resistive Switching Time Variations vs. Gate Resistance 1000 SINGLE PULSE T = 25°C C 100 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTP75N06L, NTB75N06L 25° Drain−to−Source Voltage vs. Total Charge 25° ...

Page 5

... ORDERING INFORMATION Device NTP75N06L NTB75N06L NTB75N06LG NTB75N06LT4 NTB75N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP75N06L, NTB75N06L P (pk DUTY CYCLE 0.001 0.01 t, TIME (ms) Figure 13 ...

Page 6

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP75N06L, NTB75N06L PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 7

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP75N06L, NTB75N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA SEATING − ...

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