NTE27 NTE ELECTRONICS, NTE27 Datasheet
NTE27
Manufacturer Part Number
NTE27
Description
TRANSISTOR,BJT,PNP,45V V(BR)CEO,TO-3
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE27.pdf
(2 pages)
Description:
The NTE27 is a PNP germanium power transistor designed for high current applications requiring
high-gain and low saturation voltages.
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Collector-Base Voltage, V
Emitter-Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Floating Potential
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25°C
Parameter
EB
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Current, High Gain Amp
CEO
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Germanium PNP Transistor
C
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
(BR)CEO
(BR)CES
V
I
I
I
CEX
CBO
EBO
D
EBF
ΘJC
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE27
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V
T
V
V
V
C
C
C
BE
CB
CE
CB
BE
= 1A, I
= 300mA, V
= +71°C
= 30V, I
= 30V, I
= 60V, I
= 45V, V
=60V, I
Test Conditions
B
= 0, Note 1
E
C
C
E
BE(off)
= 0
= 0, T
= 0
= 0
BE
= 0
= 2V,
C
= +71°C
Min Typ Max Unit
45
60
-
-
-
-
-
-65° to +110°C
-65° to +110°C
-
-
-
-
-
-
-
0.5
15
15
+0.5°C/W
-
-
4
4
2W/°C
170W
mA
mA
mA
mA
45V
60V
60V
30V
60A
V
V
V
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NTE27 Summary of contents
Page 1
... Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, V Collector-Emitter Voltage, V Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current, I Total Device Dissipation (T C Derate Above 25° Operating Junction Temperature Range, T ...
Page 2
Parameter ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Characteristics Common-Emitter Cutoff Frequency Note 1. To avoid excessive heating of the collector junction, perform test with pulse method. .350 (8.89) .312 (7.93) Min Emitter .215 ...