NTP30N06 ON Semiconductor, NTP30N06 Datasheet

MOSFET N-CH 60V 27A TO220AB

NTP30N06

Manufacturer Part Number
NTP30N06
Description
MOSFET N-CH 60V 27A TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTP30N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
88.2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTP30N06OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTP30N06L
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTP30N06LG
Manufacturer:
ON
Quantity:
12 500
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N−Channel TO−220 and D
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Derate above 25°C
Energy − Starting T
(V
I
Purposes, 1/8 in from case for 10 seconds
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 50 Vdc, V
= 26 A, V
DS
Rating
GS
= 60 Vdc)
J
p
(T
= 10 Vdc, L = 0.3 mH
= 25°C
v10 ms)
A
A
p
J
GS
v10 ms)
= 25°C
= 100°C
= 25°C unless otherwise noted)
A
= 10 MW)
= 25°C
2
PAK
Symbol
T
V
V
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"20
"30
88.2
0.59
101
260
1.7
60
60
27
15
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
2
1
NTx30N06G
AYWW
3
30 AMPERES, 60 VOLTS
Drain
NTx30N06
x
A
Y
WW
G
Drain
4
ORDERING INFORMATION
2
4
G
CASE 221A
MARKING DIAGRAMS
TO−220AB
& PIN ASSIGNMENTS
R
STYLE 5
http://onsemi.com
DS(on)
3
Source
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
Publication Order Number:
= 42 mW
S
N−Channel
Gate
1
1
NTx
30N06G
AYWW
2
Drain
Drain
3
NTP30N06/D
CASE 418B
4
2
STYLE 2
D
2
PAK
3
Source
4

Related parts for NTP30N06

NTP30N06 Summary of contents

Page 1

... NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Adc Reverse Recovery Time Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. NTP30N06, NTB30N06 (T = 25°C unless otherwise noted Vdc 7.0 Vdc Adc ...

Page 3

... Figure 3. On−Resistance versus Gate−to−Source Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTP30N06, NTB30N06 60 ≥ 6 5 100°C 4 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0.09 ...

Page 4

... SINGLE PULSE T = 25°C C 100 100 Limit DS(on) Thermal Limit Package Limit 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTP30N06, NTB30N06 25° iss 4 C oss 2 C rss Drain−to−Source Voltage versus Total Charge ...

Page 5

... Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Device NTP30N06 NTB30N06 NTB30N06G NTB30N06T4 NTB30N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP30N06, NTB30N06 P (pk DUTY CYCLE 0.01 0.1 t, TIME (s) Figure 13 ...

Page 6

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP30N06, NTB30N06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 7

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP30N06, NTB30N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA SEATING − ...

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