si3433 Vishay, si3433 Datasheet

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si3433

Manufacturer Part Number
si3433
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 71160
S-00624—Rev. A, 03-Apr-00
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
(V)
J
ti
3 mm
t A bi
0.057 @ V
0.080 @ V
0.042 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
Top View
TSOP-6
2.85 mm
GS
GS
GS
a
a
= - 2.5 V
= - 1.8 V
= - 4.5 V
P-Channel 1.8-V (G-S) MOSFET
(W)
6
5
4
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
New Product
I
A
A
A
A
D
- 5.6
- 4.8
- 4.1
= 25_C
= 85_C
= 25_C
= 85_C
(A)
(3) G
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
P-Channel MOSFET
(1, 2, 5, 6) D
(4) S
Typical
5 secs
- 5.6
- 4.1
- 1.7
2.0
1.0
45
90
25
- 55 to 150
- 20
"8
- 20
Steady State
Maximum
Vishay Siliconix
- 4.3
- 3.1
- 0.9
62.5
1.1
0.6
110
30
Si3433
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
2-1

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si3433 Summary of contents

Page 1

... 85_C 25_C 85_C stg Symbol Typical sec R R thJA Steady State Steady State R thJF Si3433 Vishay Siliconix Steady State Unit - "8 - 4.3 - 5.6 - 4 1.7 - 0.9 2.0 1 1.0 0 150 _C Maximum Unit 45 62.5 90 110 _C/W C www ...

Page 2

... Si3433 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (_C) J On-Resistance vs. Gate-to-Source Voltage 0.15 0. 5.6 A 0.09 D 0.06 0.03 0. Gate-to-Source Voltage (V) GS Si3433 16 20 125 150 4 5 www.vishay.com 2-3 ...

Page 4

... Si3433 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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