SP202 Polyfet RF Devices, SP202 Datasheet
SP202
Manufacturer Part Number
SP202
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer
Polyfet RF Devices
Datasheet
1.SP202.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SP2026-1EN
Manufacturer:
SONY
Quantity:
6 220
Company:
Part Number:
SP2026-2EN
Manufacturer:
T
Quantity:
6 228
Company:
Part Number:
SP202AET-L
Manufacturer:
TOSHIBA
Quantity:
918
Company:
Part Number:
SP202ECN
Manufacturer:
SIPEX
Quantity:
6 889
Company:
Part Number:
SP202ECN
Manufacturer:
SIPEX
Quantity:
6 500
Part Number:
SP202ECN
Manufacturer:
SIPEX
Quantity:
20 000
Part Number:
SP202ECN-L/TR
Manufacturer:
SIPEX
Quantity:
20 000
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
transistors designed specifically
General Description
SYMBOL
SYMBOL
Total
Device
Dissipation
"Polyfet" process features
Silicon VDMOS and LDMOS
Gps
VSWR
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Bvdss
30
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Watts
TM
Zero Bias Drain Current
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PARAMETER
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Junction to
Case Thermal
Resistance
polyfet rf devices
t
7.00 C/W
o
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200 C
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
o
-65 C to 150 C
Storage
Temperature
POLYFET RF DEVICES
MIN
MIN
o
1
10
65
o
TYP
TYP
45
2.00
20.0
12.0
2.80
0.6
1.2
DC Drain
Current
8.0
20:1
MAX
MAX
1
7
0.4
1.8
WATTS OUTPUT )
A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Mho
Amp
RF POWER
mA
dB
uA
pF
pF
pF
%
V
V
25 C )
HIGH EFFICIENCY, LINEAR
Drain to
Gate
Voltage
o
HIGH GAIN, LOW NOISE
TEST CONDITIONS
Idq =
Idq =
Idq = 0.40
TEST CONDITIONS
70
V
Vds =
Vds = 0V Vgs = 30V
Ids =
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
Ids =
Package Style
8.0
0.40
0.40
0.04
REVISION 03/28/2001
VDMOS
20.00
28.0
Watts
28.0
28.0
28.0
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Source
Voltage
70
Single Ended
V
1.00
TRANSISTOR
28.0
28.0
28.0
AP
A
V, F =
V, F =
SP202
V, F =
Gate to
Source
Voltage
1,000
1,000
1,000
20
V
MHz
MHz
MHz
Related parts for SP202
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TO-3P
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Polyfet Rf Devices
Manufacturer:
polyfet
Datasheet:
Part Number:
Description:
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer:
Polyfet RF Devices
Part Number:
Description:
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer:
Polyfet RF Devices
Part Number:
Description:
Rf Power Vdmos Transistor
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Rf Power Vdmos Transistor
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Rf Power Transistor Vdmos
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Rf Power Vdmos Transistor
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Rf Power Vdmos Transistor
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Rf Power Vdmos Transistor
Manufacturer:
Polyfet RF Devices
Datasheet:
Part Number:
Description:
Power Rf Amplifiers
Manufacturer:
Polyfet RF Devices
Datasheet:
SP202 Summary of contents
Page 1
... Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 1.00 Amp Vgs = 20V, Vds = 10V 28.0 Vgs = 0V MHz pF Vds = 28.0 Vgs = 0V MHz Vds = pF 28.0 Vgs = 0V MHz Vds = pF REVISION 03/28/2001 SP202 TRANSISTOR AP Gate to Source Voltage 20 V 28.0 1,000 MHz 28.0 1,000 MHz 28.0 1,000 MHz ...
Page 2
... CURVE S2A 2 DIE IV 3 2.5 2 1 VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SP202 100 13.00 12.00 11.00 Pout 10 10.00 9.00 1dB compression = 8 watts 8.00 1 7.00 Gain 6.00 5.00 0 10.00 1.00 0. ...