SP8M3 Rohm, SP8M3 Datasheet
SP8M3
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SP8M3 Summary of contents
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... A ∗ °C 150 −55 to +150 °C ∗A protection diode is included between the gate and Limits Unit ∗ ° 62.5 SP8M3 5.0±0.2 0.2±0.1 0.4±0.1 1.27 0.1 Each lead has same dimensions Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate ∗ ...
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... V 15V DD − − =5V 1 − − =5.0A 1 Min. Typ. Max. Unit − − =6.4A SP8M3 Conditions =0V DS =0V GS =0V GS =1mA D ∗ =10V GS ∗ =4.5V GS ∗ =4V GS ∗ =10V DS ∗ 15V DD ∗ ∗ ∗ ∗ ∗ ∗ Conditions ∗ ...
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... V DD − − = −5V 2 − − = −4.5A 3 Min. Typ. Max. Unit − − −1.2 = −1.6A SP8M3 Conditions =0V DS = −1mA D ∗ = −10V GS ∗ = −4.5V GS ∗ = −4.0V GS ∗ = −10V DS ∗ −15V DD ∗ ∗ ∗ ∗ ∗ ...
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... On-State Resistance vs. Gate-Source Voltage 1000 V GS Ta=125°C Pulsed Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M3 10 Ta=25°C =15V =15V =5A =10V =10Ω =10Ω Pulsed ...
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... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M3 8 = −15V 7 = −10V TOTAL GATE CHARGE : Qg (nC) Fig ...
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... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...
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