TIC201 Bourns, Inc., TIC201 Datasheet
TIC201
Manufacturer Part Number
TIC201
Description
Silicon Triacs
Manufacturer
Bourns, Inc.
Datasheet
1.TIC201.pdf
(2 pages)
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absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
JANUARY 1977- REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
●
●
●
●
●
I
DRM
R O D U C T
I
GT
Sensitive Gate Triacs
2.5 A RMS
Glass Passivated Wafer
400 V to 700 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
4. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
the rate of 100 mA/°C.
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 5 mA (Quadrant 1)
I N F O R M A T I O N
V
V
V
V
V
D
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
TEST CONDITIONS
G
L
L
L
L
= 0
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
p(g)
p(g)
p(g)
p(g)
TIC201M
TIC201D
TIC201S
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
I
P
T
I
G(AV)
TSM
T
DRM
GM
T
GM
stg
C
L
MIN
2
3
1
SILICON TRIACS
TYP
-40 to +110
-40 to +125
TIC201 SERIES
VALUE
±0.2
400
600
700
230
2.5
1.3
0.3
12
MAX
-10
±1
25
-8
5
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
1
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TIC201 Summary of contents
Page 1
... DRM Ω = +12 V† p( Ω = +12 V† p( Ω = -12 V† p( Ω = -12 V† p(g) TIC201 SERIES SILICON TRIACS TO-220 PACKAGE (TOP VIEW SYMBOL VALUE 400 V 600 DRM 700 I 2.5 T(RMS TSM I ±0 1 ...
Page 2
... TIC201 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER V supply Gate trigger V supply V GT voltage V supply V supply V On-state voltage I = ±3 supply I Holding current H V supply V supply I Latching current L V supply Critical rate of rise of ...