vp2106 Supertex, Inc., vp2106 Datasheet

vp2106

Manufacturer Part Number

vp2106

Description

P-channel Enhancement-mode Vertical Dmos Fet

Manufacturer

Supertex, Inc.

Datasheet

1.VP2106.pdf (5 pages)

Current page: 1 of 5
Download datasheet (587Kb)

Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Complementary N- and P-channel devices

Motor controls

Converters

Ampliﬁ ers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VP2106

Device

ISS

and fast switching speeds

Package Option

VP2106N3-G

TO-92

P-Channel Enhancement-Mode

Vertical DMOS FET

-55

C to +150

300

Value

±20V

DGS

DSS

Pin Conﬁ guration

Product Marking

General Description

The Supertex VP2106 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁ cient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

DSS

-60

(V)

/BV

Y Y W W

DGS

2106

YY = Year Sealed

WW = Week Sealed

DRAIN

TO-92 (N3)

(max)

DS(ON)

(Ω)

= “Green” Packaging

SOURCE

GATE

VP2106

(min)

-500

(mA)

D(ON)

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vp2106 Summary of contents

Page 1

... Distance of 1.6mm from case for 10 seconds. P-Channel Enhancement-Mode Vertical DMOS FET General Description The Supertex VP2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁ ...

Page 2

... -500mA 5.0 9 25Ω GEN 4.0 8.0 -1 400 - 0V PULSE R GEN D.U.T. Output INPUT VP2106 † DRM (mA) (mA) -250 -800 = -1.0mA = -1.0mA D = -1.0mA Max Rating DS = 125° -25V DS = -100mA D = -500mA D = -500mA D = -500mA D = -500mA = -500mA ...

Page 3

... 25° 125°C A -0.6 -0.8 -1.0 -10 -100 (volts) 3 Saturation Characteristics -1 -10V -0.8 -9V -8V -0.6 -7V -0.4 -6V -5V -0.2 -4V - (volts) DS Power Dissipation vs. Ambient Temperature 1.0 TO-92 0 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO- 25° 0.001 0.01 0.1 1.0 t (seconds) p VP2106 -10 150 10 ...

Page 4

... ISS C RSS -30 -40 4 On-Resistance vs. Drain Current -10V -0.2 -0.4 -0.6 -0.8 I (amperes and R Variation with Temperature (th -10V, 0.5A DS(ON 1mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V -40V DS -6 101 1.0 Q (nanocoulombs) G VP2106 -1.0 2.0 1.6 1.2 0.8 0.4 0 150 2.0 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP2106 A020408 Side View ...

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