ZTX718 Diodes Zetex, ZTX718 Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single ZTX718
Manufacturer Part Number
ZTX718
Description
TRANS PNP HG -20V -2500MA TO92-3
Manufacturer
Diodes Zetex
Transistor Type
PNP
Current - Collector (ic) (max)
2.5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
260mV @ 200mA, 2.5A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 2A, 2V
Power - Max
1W
Frequency - Transition
180MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 4– MAY 1998
FEATURES
*
*
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Practical Power Dissipation*
Power Dissipation at T
Operating and Storage Temperature Range
6A Peak pulse current
Excellent h
low saturation voltage
I
Power MOSFET gate driver in conjunction with
complementary ZTX618
C
Cont 2.5A
FE
characteristics up to 6A (pulsed)
amb
=25°C
SYMBOL
V
V
I
I
I
P
P
T
V
CM
C
B
totp
tot
j
CBO
CEO
EBO
:T
stg
-55 to +200
VALUE
-500
-2.5
-20
-20
1.5
-5
-6
1
TO92 Compatible
ZTX718
C
B
E
E-Line
UNIT
mA
W
W
°C
A
A
V
V
V
Related parts for ZTX718
ZTX718 Summary of contents
... Practical Power Dissipation* Power Dissipation at T amb Operating and Storage Temperature Range * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. SYMBOL V CBO V CEO V EBO totp =25°C P tot stg ZTX718 E-Line TO92 Compatible VALUE UNIT - -2.5 A -500 mA 1 -55 to +200 °C ...
... ZTX718 ELECTRIAL CHARACTERISTICS (at T PARAMETER SYMBOL Collector-Base V Breakdown Voltage Collector-Emitter V Breakdown Voltage Emitter-Base V Breakdown Voltage Collector Cut-Off I Current Emitter Cut-Off I Current Collector Emitter I Cut-Off Current Collector-Emitter V Saturation Voltage Base-Emitter V Saturation Voltage Base-Emitter Turn-On V Voltage Static Forward h Current Transfer Ratio Transition f Frequency ...
... CE 1 1.2 1.0 0.8 0.6 0.4 0 10A 1mA 100ms 0.1 10ms 0.01 1A 10A 0.1V ZTX718 =10 100°C 25°C -55°C 10mA 100mA 1A I -Collector Current CE(sat) C =10 -55°C 25°C 100°C 10mA 100mA 1A I -Collector Current BE(sat) Single Pulse Test Tamb=25C ...
... ZTX718 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Ambient † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 180 D=1(D.C.) 160 t1 140 D=t1 120 tP 100 D=0.5 80 D=0.2 60 D=0.1 D=0. 0.1ms 1ms 10ms 100ms Pulse Width Transient Thermal Resistance Zetex plc. ...
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