ESD5Z6.0T1G ON Semiconductor, ESD5Z6.0T1G Datasheet - Page 2

• Manufacturer Part Number: ESD5Z6.0T1G
• Description: TVS ESD ASD 181W 6.0V SOD-523
• Manufacturer: ON Semiconductor

Specifications of ESD5Z6.0T1G

• Voltage - Reverse Standoff (typ): 6V
• Voltage - Breakdown: 6.8V
• Power (watts): 181W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Number Of Elements: 1
• Polarity: Uni-Directional
• Package Type: SOD-523
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.8V
• Clamping Voltage: 20.5V
• Reverse Stand-off Voltage: 6V
• Leakage Current (max): 10nA
• Peak Pulse Current: 8.8A
• Peak Pulse Power Dissipation: 240W
• Test Current (it): 1mA
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Channels: 1 Channel
• Operating Voltage: 6 V
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 8.8 A
• Capacitance: 70 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.8 mm W x 1.2 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ESD5Z6.0T1G; ESD5Z6.0T1GOSTR

* The “G'' suffix indicates Pb-Free package available.
**Other voltages available upon request.
†Surge current waveform per Figure 5.
2. V
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
ELECTRICAL CHARACTERISTICS
(T
*See Application Note AND8308/D for detailed explanations of
ELECTRICAL CHARACTERISTICS
ESD5Z2.5T1, G*
ESD5Z3.3T1, G*
ESD5Z5.0T1, G*
ESD5Z6.0T1, G*
ESD5Z7.0T1, G*
ESD5Z12T1, G*
Symbol
A
datasheet parameters.
V
V
P
= 25°C unless otherwise noted)
I
RWM
V
V
I
PP
I
I
C
BR
BR
R
Device**
T
F
pk
C
F
Figure 1. ESD Clamping Voltage Screenshot
is measured with a pulse test current I
Positive 8 kV contact per IEC 61000-4-2
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
Peak Power Dissipation
Max. Capacitance @V
Marking
Device
ZG
ZM
ZD
ZE
ZF
ZH
V
Parameter
Max
RWM
2.5
3.3
5.0
6.0
7.0
(V)
12
F
PP
R
T
= 0 and f = 1 MHz
@ V
I
R
Max
0.05
0.05
0.01
0.01
0.01
(T
6.0
(mA)
RWM
A
T
= 25°C unless otherwise noted, V
at an ambient temperature of 25°C.
V
(Note 2)
BR
ESD5Z2.5T1 SERIES
RWM
@ I
14.1
Min
4.0
5.0
6.2
6.8
7.5
(V)
T
http://onsemi.com
mA
1.0
1.0
1.0
1.0
1.0
1.0
I
T
2
@ I
V
5.0 A
C
11.6
12.4
13.5
Typ
6.5
8.4
17
PP
(V)
†
=
Figure 2. ESD Clamping Voltage Screenshot
F
Negative 8 kV contact per IEC 61000-4-2
V
= 1.1 V Max. @ I
C
V
V
Max I
BR
C
Max
10.9
14.1
18.6
20.5
22.7
(V) @
25
V
PP
RWM
†
Uni-Directional TVS
F
Max
(A)
11.0
11.2
I
9.4
8.8
8.8
9.6
PP
= 10 mA for all types)
I
†
F
I
I
I
I
R
T
PP
(W)
Max
P
120
158
174
181
200
240
V
pk
F
†
(pF)
Typ
145
105
80
70
65
55
C
Figures 1 and 2
IEC61000-4-2
See Below
(Note 3)
(Note 4)
Per
V
V
C