SMTPA270 STMicroelectronics, SMTPA270 Datasheet - Page 5

• Manufacturer Part Number: SMTPA270
• Description: IC TVS BIDIRECT 270V 50A DO214AA
• Manufacturer: STMicroelectronics
• Series: TRISIL™r
• Type: TRIACr

Specifications of SMTPA270

• Voltage - Reverse Standoff (typ): 243V
• Voltage - Breakdown: 270V
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Repetitive Peak Off-state Volt: 270V
• Off-state Voltage: 270V
• Hold Current: 150mA
• Package Type: DO-214AA
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 16A
• Mounting: Surface Mount
• Pin Count: 2
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 360 V
• Operating Voltage: 243 V
• Breakdown Voltage: 270 V
• Termination Style: SMD/SMT
• Peak Surge Current: 50 A
• Capacitance: 12 pF
• Dimensions: 3.95 (Max) mm W x 4.6 (Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-3724-2

SMP50 / SMTPA / TPA
Figure 3.
Figure 5.
Figure 7.
1.10
1.05
1.00
0.95
0.90
1E+2
1E+0
50
20
10
1E+1
1E-1
5
2
1
-40
0
I (A)
V
T
1E-3
270 V
BO
62 V
Z
th(j-a)
[T ] / V
1
j
-20
(°C/W)
1E-2
BO
2
On-state voltage versus on-state
current (typical values)
Relative variation of breakover
voltage versus junction
temperature
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4,
S
layout)
Cu
[T =25°C]
j
0
= 35 µm, recommended pad
3
1E-1
SMTPA / TPA
4
20
V (V)
T (°C)
T
j
t (s)
p
5
1E+0
SMP50
40
6
1E+1
7
60
8
1E+2
80
T =25°C
j
9
5E+2
100
10
Figure 4.
Figure 6.
Figure 8.
2.5
2.0
1.5
1.0
0.5
0.0
2000
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
-40
1
C[V ] / C[V =50V]
1
I [T ] / I [T =25°C]
H
25
I
RM
R
j
V =V
[T ] / I
R
-20
2
H
j
RM
j
R
Relative variation of holding
current versus junction
temperature
Relative variation of leakage
current versus reverse voltage
applied (typical values)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
RM
[T =25°C]
0
50
5
j
20
10
V (V)
T (°C)
T (°C)
R
j
j
40
75
20
60
50
Characteristics
80
100
100
V
F=1MHz
T =25°C
RMS
j
100
=1V
5/11
120
300
125